Search results for " Elettroni"

showing 10 items of 1073 documents

Optical turbulence measurements and channel modeling of an indoor Free Space Optics link (Abstract)

2014

optical turbulencetime-correlated Gamma-Gamma channel modelSettore ING-INF/03 - TelecomunicazioniFree Space OpticSettore ING-INF/01 - Elettronicaindoor link
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Blue Emitting Organic Light Emitting Diodes

2019

Organic light emitting diodes (OLEDs) [1] can be fabricated on a range of materials such as glass, silicon or flexible plastic substrates. This can be exploited for the realization of integrated OLED-based fluorescence chemical sensors [2] and microfluidic systems [3] for application in areas such as biotechnology, life sciences, pharmaceuticals, public health and defense. These devices hold promises to be cost effective, ultra-compact (including the possibility to be fabricated into large bidimensional arrays), and capable to handle smaller sample volumes in order to achieve high throughput. Blue light is advantageous because it is strongly absorbed by most sensing molecules attached to bi…

organic materials and devices organic semiconductors organic ligth emitting diodesSettore ING-INF/01 - Elettronica
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Film di ZnO drogati di tipo p per diffusione termica di atomi di fosforo da substrati di InP

2012

We report on p-type doping of ZnO films grown by pulsed-laser deposition on InP substrates. Electrical properties change of the films, from n-type to p-type, has been observed after postgrowth annealing at 600°C for 1h in air.

ossido di zincodrogaggio pSettore ING-INF/01 - Elettronica
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The p-Type Doping of ZnO: Mirage or Reality?

2015

This chapter deals with a critical review on p-type doping of ZnO. In the past 15 years, ZnO has attracted considerable attention due to its unique properties, which make it a promising material for optoelectronic devices applications. However, a reliable p-type ZnO doping remains a major challenge because of self-compensation effects; thus, despite the advantages of these devices, the fabrication of ZnO-based devices is hampered by the lack of a stable p-type doping. A careful and critical analysis of the results reported in literature raises many doubts about the correctness of the doping-type assignments and, in general, the values of the electrical parameters reported. A historical surv…

p-dopingelectronic materialsZnOSettore ING-INF/01 - Elettronica
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Partial Information Decomposition of Brain-Heart Interactions in Temporal Lobe Epilepsy in the Childhood

We apply information decomposition methods to elicit unique, redundant and synergistic causal contributions of ipsilateral and contralateral EEG activity to heart rate dynamics in epileptic children. We find that information flows from brain to heart according to opposite lateralization effects for the delta and alpha rhythms, suggesting that different neuroautonomic mechanisms take place in the pre- and post-ictal phases of temporal lobe seizures.

partial information decompositionSettore ING-INF/06 - Bioingegneria Elettronica E InformaticaepilepsyEEGheart rate variability (HRV)
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Signal to noise ratio measurements of silicon photomultipliers in the continuous wave regime

2014

We report on our signal to noise ratio (SNR) measurements carried out, in the continuous wave regime, on a novel class of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon p-type substrate.

photomultiplier SiPM snr detectorSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - Elettronica
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Signal to noise ratio measurements of silicon photomultipliers

2014

We report on our signal to noise ratio (SNR) measurements carried out, in the continuous wave regime, on a novel class of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon p-type substrate. SiPMs are large area detectors consisting of a parallel array of Geiger Mode APDs with individual integrated quenching resistors. Each photodiode is an independent photon counting microcell and is connected to a common analog output to produce a summation signal proportional to the number of detected photons [1], [2]. SNR of SiPMs is expressed by the ratio of the SiPM average signal current and the RMS deviation of the overall current (i.e., the overall shot noise current). The …

photomultipliers silicon snr detectorSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - Elettronica
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A silicon photomultiplier-based analog front-end for DC component rejection and pulse wave recording in photoplethysmographic applications

2022

The growing attention towards healthcare and the constant technological innovations in the field of semiconductor components have allowed a widespread availability of smaller devices, suitable to be worn and able to continuously acquire physiological signals. Wearable devices are, however, more prone to yield signals corrupted by artifacts caused by movement. This issue is particularly relevant in photoplethysmographic (PPG) applications where also, to exploit the whole dynamic range of the acquisition device, the DC component of the signal should be removed and the AC component amplified. In this context, we have designed and realized an analog front-end (AFE) suitable to be integrated wit…

photoplethysmography (PPG)bio-sensing applicationSettore ING-INF/06 - Bioingegneria Elettronica E InformaticaAnalog front-end (AFE)wearable health devices (WHD)silicon photomultiplier (SiPM)Settore ING-INF/01 - Elettronica2022 IEEE International Symposium on Medical Measurements and Applications (MeMeA)
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Thin Film CIGS Solar Cells, Photovoltaic Modules, and the Problems of Modeling

2013

Starting from the results regarding a nonvacuum technique to fabricate CIGS thin films for solar cells by means of single-step electrodeposition, we focus on the methodological problems of modeling at cell structure and photovoltaic module levels. As a matter of fact, electrodeposition is known as a practical alternative to costly vacuum-based technologies for semiconductor processing in the photovoltaic device sector, but it can lead to quite different structural and electrical properties. For this reason, a greater effort is required to ensure that the perspectives of the electrical engineer and the material scientist are given an opportunity for a closer comparison and a common language.…

photovoltaic moduleArticle SubjectComputer sciencelcsh:TJ807-830CIGS solar celllcsh:Renewable energy sourcessolar energyNanotechnologySettore ING-IND/32 - Convertitori Macchine E Azionamenti ElettriciSettore ING-INF/01 - ElettronicamodellingGeneral Materials ScienceThin filmThin-film solar cellRenewable Energy Sustainability and the Environmentbusiness.industryPhotovoltaic systemSettore ING-INF/02 - Campi ElettromagneticiGeneral ChemistrysimulationEngineering physicsCopper indium gallium selenide solar cellsAtomic and Molecular Physics and OpticsSemiconductorThin-film solar cells; CIGS solar cells; modelling; simulations; photonic structures; photovoltaic modules; solar energyCell structurephotonic structurebusiness
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DC-DC Converter for Photovoltaic Application with MPPT function embedded interleaved 4

2012

We present a DC-DC converter for photovoltaic (PV) applications that is suitable for a distributed power conversion approach, obtained by transferring part of the electronics from the inverter to the module. The proposed circuit is a high-efficiency four-phase interleaved boost converter employing relatively low-valued inductive and capacitive components. Its realization is made possible thanks to the design of a dedicated integrated circuit (IC) performing the converter control section as well as the Maximum Power Point Tracking (MPPT) algorithm. The solution is designed for a maximum delivered power of 300 W and to work with MPPT voltage between 9 V and 40 V, with maximum allowed panel cu…

photovoltaic MPPT DC-DC converterSettore ING-INF/01 - Elettronica
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