Search results for " GAP"
showing 10 items of 811 documents
Influences of Structure and Composition on the Photoelectrochemical Behaviour of Anodic Films on Zr and Zr-20at.%Ti
2008
Abstract A photoelectrochemical investigation on anodic films of different thickness grown on sputter-deposited Zr and Zr–20 at.%Ti was carried out. The estimated optical band gap and flat band potential of thick ( U F ≥ 50 V) anodic films were related to their crystalline structure and compared with those obtained for thinner ( U F ≤ 8 V/SCE) anodic oxides having undetermined crystalline structure. The E g values obtained by photocurrent spectroscopy were also compared with the experimental band gap estimated by other optical ex situ techniques and with the available theoretical estimates of the zirconia electronic structures in an attempt to reconcile the wide range of band gap data rep…
Photocurrent Spectroscopy in Corrosion and Passivity Studies. A Critical Assessment
2016
Photocurrent Spectroscopy (PCS) is currently employed for the characterization of solid-state properties of semiconducting and insulating materials, since the knowledge of their band gap is a prerequisite to any possible application in different fields such as: solar energy conversion (photoelectrochemical and photovoltaic solar cells, photocatalysis) and microelectronics (high-k, high band-gap materials) (1-2). In the last 20-30 years an increasing number of scientists working in the area of corrosion has been attracted by this technique owing to its versatility and ability to scrutinize in situ corrosion layers and passive films having semiconducting or insulating behaviour. In previous w…
Photoelectrochemical characterization of amorphous anodic films on Ti-6at.%Si
2013
Abstract The solid state properties of anodic films grown galvanostatically on sputtering-deposited Ti–6at.%Si alloys were studied as a function of the formation voltage (5–40 V). From the photocurrent spectra a band gap of ∼3.4 eV was estimated for all the investigated thicknesses, which is almost coincident with the value measured for amorphous TiO 2 . The photocharacteristics allowed to estimate the flat band potential of the films, which resulted to be more anodic for thicker layers and allowed to evidence a change from n-type semiconducting material to insulator by increasing the formation voltage. A dielectric constant of ∼31 was estimated by differential capacitance measurements. The…
Band gap narrowing and dielectric constant enhancement of (NbxTa(1-x))2O5 by electrochemical nitrogen doping
2018
Abstract Anodic films were grown to 5 V and 50 V on Nb, Ta and Ta-Nb sputtering deposited alloys in 0.1 M ammonium biborate solutions in order to induce N incorporation. Their properties were compared to those of N free anodic films grown to the same formation voltages in 0.1 M NaOH. Photoelectrochemical measurements evidenced the presence of optical transitions at energy lower than the band gap of the oxides, attributed to localized states located close to the valence band mobility edge of the films, generated by N 2p orbitals, with consequent narrowing of the band gap. Since N incorporation occurs in the outer 70% of the anodic films, the dependence of the measured photocurrent as a funct…
Photocurrent Spectroscopy Applied to the Characterization of Passive Films on Sputter-Deposited Ti-Zr Alloys
2008
Abstract A photoelectrochemical investigation on thin (⩽13 nm) mixed oxides grown on sputter-deposited Ti–Zr alloys of different composition by air exposure and by anodizing (formation voltage, UF = 4 V/SCE) was carried out. The experimental results showed that the optical band gap, E g opt , increases with increasing Zr content in both air formed and anodic films. Such behaviour is in agreement with the theoretical expectation based on the correlation between the band gap values of oxides and the difference of electronegativity of their constituents. The flat band potential of the mixed oxides was found to be almost independent on the Ti/Zr ratio into the film and more anodic with respect …
A photocurrent spectroscopic investigation of passive films on chromium
1990
Abstract Photoelectrochemical experiments have been carried out in order to identify the passive layers grown on chromium metal in different conditions. Changes in the values of the band gap of the films have been related to changes of composition, due to the different water content of the films.
Physicochemical characterisation of thermally aged anodic films on magnetron sputtered niobium
2010
The influence of thermal aging, at intermediate temperature (1h at 250°C) and in different environments, on the electronic and solid-state properties of stabilized 160 nm thick amorphous anodic niobia, grown on magnetron sputtered niobium metal, has been studied. A detailed physicochemical characterisation of the a-Nb2O5/0.5M H2SO4 electrolyte junction has been carried out by means of photocurrent and electrochemical impedance spectroscopy as well by differential admittance measurements. A change in the optical band gap (3.45 eV) of niobia film has been observed after aging (3.30 eV) at 250°C in air for 1 hour. A cathodic shift (0.15-0.2 Volt) in the flat band potential of the junction has …
A photoelectrochemical investigation of conversion coatings on Mg substrates
2005
Abstract The structure, morphology and composition of conversion coatings grown in stannate bath on pure Mg were studied using potential–time, polarization curves, X-ray diffraction, scanning electron microscopy and photocurrent spectroscopy. The coating is manly constituted by crystalline magnesium–tin hydroxide, whose morphology and distribution depends on the conversion bath composition and temperature. The photoelectrochemical investigation allowed to estimate the band gap value of MgSn(OH) 6 and flat band potential. A sketch of the metal/passive film/electrolyte junction formed during conversion on the metal substrate is reported to account for the overall photoelectrochemical behaviou…
Photocurrent spectroscopy study of passive films on hafnium and hafnium–tungsten sputtered alloys
2003
Abstract Anodic and air-formed films on sputtered Hf and W–Hf alloys of different composition have been investigated by Rutherford back scattering, photocurrent spectroscopy (PCS) and transmission electron microscopy (TEM) techniques. In alkaline solutions the PCS data suggest the formation on Hf metal of a duplex layer with anodic hafnia covered by an external layer of composition close to HfO(OH) 2 . This last compound is also present on Hf air-formed films. In acidic solutions the initial oxy-hydroxide film disappears at high anodising potentials ( V f >10 V). In the case of W–Hf alloys films of different composition and semiconducting behaviour are formed by air exposure or by anodising…
The photoelectrochemistry of thin passive layers. Investigation of anodic oxide films on titanium metal
1993
Abstract A photoelectrochemical investigation has been performed on thin TiO2 films grown anodically in 0.5 M H2SO4 solution at high growth rates. The shape of the photocurrent vs. potential curves under monochromatic irradiation (photocharacteristics) depends on the photon energy of the incident light at energies above the optical band gap of the films (3.25 ± 0.05 eV). This finding has been explained by considering the presence of geminate recombination of the photogenerated electron-hole pairs. In order to fit the experimental photocharacteristics, an expression for the photocurrent is proposed which takes into account the low drift range of photocarriers and possible recombination in th…