Search results for "Cadmium telluride"

Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates

2003

Abstract The morphology and structure of CdTe(1 1 1) layers grown on GaAs(1 0 0) by MOCVD have been studied by atomic force microscopy (AFM) and X-ray texture analysis. Growth conditions have been chosen so that mirror-like CdTe layers are obtained. Layers whose growth times vary between 10 s and 2 h have been investigated. The X-ray texture analysis shows that the CdTe layers grown on GaAs substrates that were thermally treated at 580°C for 30 min in a H 2 atmosphere exhibit a (1 1 1) preferential orientation and are twinned. This twinned structure of the (1 1 1)CdTe layer which is observed as 60° rotated triangular crystallites in the AFM images strongly influences the surface morphology.…

Structural characterization of CdTe layers grown on (0001) sapphire by MOCVD

2004

Abstract We report on the growth of CdTe layers directly onto (0 0 0 1) sapphire substrates by MOCVD. The structure and morphology of the layers have been investigated as a function of growth temperature and II/VI precursor molar ratio by X-ray diffraction and scanning electron microscopy. The texture of the samples has revealed the existence of a temperature threshold, with higher growth temperatures resulting on completely (1 1 1) oriented layers. Some of these layers contained microtwins, as indicated by the extra peaks in the {4 2 2} Φ scans, leading to the existence of two different domains. The structural quality of each domain, as well as of the sample as a whole, has been determined…

Selective area vapor-phase epitaxy and structural properties of Hg1 − xCdxTe on sapphire

1997

Selective area (SA) Hg1 − xCdxTesapphire layers have been grown using the recently developed technique of the vapor-phase epitaxy (VPE) of Hg1 − xCdxTe layers on CdTesapphire heteroepitaxial substrates (HS), which we have called “VPE on HS technique” (Sochinskii et al., J. Crystal Growth 149 (1995) 35; 161 (1996) 195). First, planar CdTe (1 1 1) 5–7 μm thick layers were grown on sapphire (0 0 0 1) wafers by metalorganic vapor-phase epitaxy (MOVPE) at 340°C for 1–2.5 h using dimethylcadmium and di-isopropyltellurium as precursors. Second, CdTe/sapphire mesas were formed using standard photolithography in the form of alternating parallel linear arrays consisting of 500 × 70 μm2 elements. Thir…

Anomální Ramanovy módy v teluridech

2021

[EN] Two anomalous broad bands are usually found in the Raman spectrum of bulk and 2D Te-based chalcogenides, which include binary compounds, like ZnTe, CdTe, HgTe, GaTe, GeTe, SnTe, PbTe, GeTe2, As2Te3, Sb2Te3, Bi2Te3, NiTe2, IrTe2, and TiTe2, as well as ternary compounds, like GaGeTe, SnSb2Te4, SnBi2Te4, and GeSb2Te5. Many different explanations have been proposed in the literature for the origin of the anomalous broad bands in tellurides, usually located between 119 and 145 cm(-1). They have been attributed to the intrinsic Raman modes of the sample, to oxidation of the sample, to the folding of Brillouin-edge modes onto the zone center, to the existence of a double resonance, like that …

Growth of gold tips onto hyperbranched CdTe nanostructures

2008

Temperature Sensor Based on Colloidal Quantum Dots PMMA Nanocomposite Waveguides

2012

In this paper, integrated temperature sensors based on active nanocomposite planar waveguides are presented. The nanocomposites consist of cadmium selenide (CdSe) and cadmium telluride (CdTe) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) matrix. When the samples are heated in a temperature range from 25$^{circ}{rm C}$ to 50 $^{circ}{rm C}$, the waveguided photoluminescence of QDs suffers from a strong intensity decrease, which is approximately quadratic dependent on temperature. Moreover, the wavelength peak of the waveguided emission spectrum of CdTe-PMMA shows a blue shift of 0.25 ${rm nm}/^{circ}{rm C}$, whereas it remains constant in the case of CdSe-PMMA. A temperature…

CdTe Detectors

2014

Cadmium telluride (CdTe) compound semiconductors for x-ray detectors have experienced a rather rapid development in the last few years, due to their appealing performance. In this chapter we review the physical properties of semiconductor detectors for x-ray and γ ray spectroscopy. In particular, we focus on compound semiconductor detectors. We also review the principles of operation of both the semiconductor detectors and the electronic chains, with special emphasis on the digital techniques. CdTe detectors’ characteristics and performance enhancements are discussed in depth. Finally, we present some original results on CdTe detectors for medical applications.

Twin coarsening in CdTe(111) films grown on GaAs(100)

2006

Abstract We present a scanning force microscopy study of twin coarsening in CdTe(1 1 1) films grown on GaAs(1 0 0). Two types of CdTe(1 1 1) twins grow epitaxially and with equal probability on the long-range wavy surface structure developed by previous in situ annealing of the GaAs(1 0 0) substrate. Due to this initial substrate wavy structure, the grain coarsening during film growth leads to a quasi-one-dimensional rippled pattern. We propose a coarsening mechanism between twins driven by the formation of stacking faults.

Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

1997

Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…

High Resolution X-Ray Spectroscopy with Compound Semiconductor Detectors and Digital Pulse Processing Systems

2012

The advent of semiconductor detectors has revolutionized the broad field of X-ray spectroscopy. Semiconductor detectors, originally developed for particle physics, are now widely used for X-ray spectroscopy in a large variety of fields, as X-ray fluorescence analysis, X-ray astronomy and diagnostic medicine. The success of semiconductor detectors is due to several unique properties that are not available with other types of detectors: the excellent energy resolution, the high detection efficiency and the possibility of development of compact detection systems. Among the semiconductors, silicon (Si) detectors are the key detectors in the soft X-ray band (15 keV) and will continue to be the c…