Search results for "Doping"
showing 10 items of 801 documents
Anion exchange membrane based on alkali doped poly(2,5-benzimidazole) for fuel cell
2012
Abstract The properties of alkali doped poly(2,5-benzimidazole) membrane with different alkali doping levels for fuel cell application are reported in this work. The alkali doping level played an important role for the ion conductivity of the membrane. The ion conductivity significantly increased with alkali doping level. The ion conductivity also increased with the temperature. The ion conductivity of the alkali doped ABPBI membrane (alkali doping level = 0.37), reached to 2.3 × 10 − 2 S cm − 1 at room temperature and 7.3 × 10 − 2 S cm − 1 at 100 °C. The water uptake of the alkali doped ABPBI membrane was increased from 9.1% to 19.2% with increasing alkali doping level at room temperatur…
Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere
2018
Time dynamics of doping and strain induced in single layer graphene by thermal treatments up to 300 degrees C in vacuum, nitrogen, carbon dioxide and oxygen controlled atmosphere are deeply studied by Raman spectroscopy and they are compared with its morphological evolution investigated by Atomic Force Microscopy. The reaction dynamics in oxygen treatments is determined down to a time scale of few minutes as well as that of dedoping process made by water vapor treatment. The interplay of strain modification and doping effects is separated. The strain is clarified to be strongly influenced by the cooling time. The doping removal is dominated by the water vapor, showing that the concentration…
Effect of air on oxygen p-doped graphene on SiO2
2016
Stability in ambient air or in vacuum-controlled atmosphere of molecular oxygen-induced p-type doping of graphene monolayer on SiO2 substrate on Si is investigated by micro-Raman spectroscopy and atomic force microscopy (AFM). The Raman 2D and G bands spectral positions and amplitude ratio are affected by the permanence in air atmosphere in a time scale of months whereas the vacuum safely maintains the doping effects determined through Raman bands. No morphological effects are induced by the doping and post-doping treatments. A reactivity of ambient molecular gas with stably trapped oxygen is suggested to induce the doping modification. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
DFT modelling of oxygen adsorption on the Ag-doped LaMnO3 (001) surface
2019
This study was partly financed by the State Education Development Agency of the Republic of Latvia via the Latvian State Scholarship (A.A.) and Latvia-Ukraine Project (Grant LV-UA/2018/2 to E.K.). The work of T.I. is performed under the state assignment of IGM SB RAS. Also, this research was partly supported by the Ministry of Education and Science of the Republic of Kazakhstan in the framework of the scientific and technology Program BR05236795 ‘‘Development of Hydrogen Energy Technologies in the Republic of Kazakhstan’’. The authors thank M. Sokolov for technical assistance and valuable suggestions.
Influence of Ge doping level on the EPR signal of Ge(1), Ge(2) and E'Ge defects in Ge-doped silica
2011
Abstract We present an experimental investigation on the Ge doping level dependence of the Electron Paramagnetic Resonance (EPR) signal spectral features of the Ge(1), Ge(2) and E'Ge defects induced in Ge doped silica. We have studied samples produced by sol–gel or PCVD techniques and doped with different amounts of Ge up to 20% by weight. The samples were gamma or beta ray irradiated and successively they were thermally treated to isolate the EPR signals of the different point defects. The data show that the EPR line shapes of the Ge(1) and the Ge(2) centers are progressively modified for doping level higher than 1%, whereas the line shape of the E'Ge defect appears independent from the do…
Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen
2019
Abstract The structural and the electronic properties of monolayer graphene made by chemical vapor deposition and transferred on various oxide substrates ( SiO 2 , Al 2 O 3 , and HfO 2 ) are investigated by Raman Spectroscopy and Atomic Force Microscopy in order to highlight the influence of the substrate on the features of p-doping obtained by O 2 thermal treatments. By varing the treatment temperature up to 400 °C, the distribution of the reaction sites of the substrates is evaluated. Their total concentration and the consequent highest doping available is determined and it is shown that this latter is linked to the water affinity of the substrate. Finally, by varing the exposure time to …
EPR/ALANINE PELLETS WITH LOW Gd CONTENT FOR NEUTRON DOSIMETRY
2013
This paper reports on results obtained by electron paramagnetic resonance (EPR) measurements and Monte Carlo (MC) simulation on a blend of alanine added with low content of gadolinium oxide (5 % by weight) to improve the sensitivity to thermal neutron without excessively affecting tissue equivalence. The sensitivity is enhanced by this doping procedure of more an order of magnitude. The results are compared with those obtained with the addition of boric acid (50 % by weight) where boron is in its natural isotopic composition in order to produce low-cost EPR dosemeters. The gadolinium addition influences neutron sensitivity more than the boron addition. The presence of additives does not sub…
Optical Properties of Irradiated Yttrium Aluminum Garnet
2012
The results of investigation of the photoluminescence (PL) and optical absorption of crystals Y3Al5O12(YAG) doped with different concentrations of manganese ions exposed to fast neutron irradiation and electron irradiation are presented. Photoluminescence spectra of YAG before neutron irradiation at T=80 K contain fine lines in orange region of spectrum, ascribed to Mn2+ ions in octahedral position. After irradiation band broadening is observed in the luminescence spectra of garnet crystals. Electron irradiation produced broad band with a complex structure related to Mn4+ ions. Exchange interaction between radiation defect and impurity ions during neutron irradiation and electron irradiatio…
The study of time-resolved absorption and luminescence in PbWO4 crystals
2000
Abstract The transient absorption and luminescence under pulsed electron beam excitation were studied for undoped and La3+ doped PbWO4 crystals. The absorption band at ∼1.0 eV is suggested to be due to self-trapped electrons and the absorption band at 3.5 eV may be due to self-trapped holes. The formation of luminescence centers via electron–hole recombination is affected by La3+ in doped crystals. The large fraction of electrons and holes undergoes thermostimulated recombination within geminate pairs and the spatial separation of geminate pairs components is important in recombination process. The intrinsic (blue) luminescence arises in this recombination. The mechanism of La3+ influence o…
Dependence of the emission properties of the germanium lone pair center on Ge doping of silica
2011
We present an experimental investigation regarding the changes induced by the Ge doping level on the emission profile of the germanium lone pair center (GLPC) in Ge doped silica. The investigated samples have been produced by the sol-gel method and by plasma-activated chemical vapor deposition and have doping levels up to 20% by weight. The recorded photoluminescence spectra show that the GLPC emission profile is the same when the Ge content is lower than ∼ 1% by weight, whereas it changes for higher doping levels. We have also performed Raman scattering measurements that show the decrease of the D1 Raman band at 490 cm( - 1) when the Ge content is higher than 1% by weight. The data suggest…