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showing 10 items of 3539 documents

Effect of the precursor's stoichiometry on the optoelectronic properties of methylammonium lead bromide perovskites

2017

International audience; Methylammonium lead bromide (MAPbBr 3) perovskites have been widely studied in applications such as lasers and light-emitting diodes, thanks to their favorable bandgap, efficient charge transport, and the possibility of processing by simple solution methods. The film morphology has a large impact on the optical and electronic properties of the material; hence the deposition methods and the type of precursors used are crucial in the preparation of efficient optoelectronic devices. Here we studied the effect of the precursor´s stoichiometry of solution processed MAPbBr 3 thin films on their optical and electronic properties. We found a drastic effect of the stoichiomet…

Materials scienceBand gapBiophysicsNanoparticleHalide02 engineering and technologyElectroluminescence010402 general chemistry01 natural sciencesBiochemistrylaw.inventionlawThin filmbusiness.industryGeneral ChemistrySemiconductor device[CHIM.MATE]Chemical Sciences/Material chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsAtomic and Molecular Physics and Optics0104 chemical sciencesOptoelectronics0210 nano-technologybusinessStoichiometryLight-emitting diode
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Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy

2001

Indium selenide thin films have been grown on p-type gallium selenide single crystal substrates by van der Waals epitaxy. The use of two crucibles in the growth process has resulted in indium selenide films with physical properties closer to these of bulk indium selenide than those prepared by other techniques. The optical properties of the films have been studied by electroabsorption measurements. The band gap and its temperature dependence are very close to those of indium selenide single crystals. The width of the fundamental transition, even if larger than that of the pure single crystal material, decreases monotonously with temperature. Exciton peaks are not observed even at low temper…

Materials scienceBand gapExcitonIndium compounds ; III-VI semiconductors ; Semiconductor epitaxial layers ; Electroabsorption ; Excitons ; Minority carriers ; Carrier lifetimeCarrier lifetimeGeneral Physics and Astronomychemistry.chemical_elementIII-VI semiconductorschemistry.chemical_compoundIndium compounds:FÍSICA [UNESCO]SelenideThin filmMinority carriersbusiness.industrySemiconductor epitaxial layersUNESCO::FÍSICACarrier lifetimeCopper indium gallium selenide solar cellschemistryElectroabsorptionOptoelectronicsExcitonsbusinessSingle crystalIndium
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Semiconducting properties of passive films and corrosion layers on weathering steel

2020

Abstract Anodic films were grown on Weathering Steel by potentiostatic polarization in slightly alkaline solution. The photoelectrochemical results reveal that they are n-type iron oxide with Eg = 2.0 eV. Rust layer grown by atmospheric corrosion are n-type semiconductors with a band gap higher than that estimated for the anodic film attributed to the formation of γ-lepidocrocite. The electrochemical impedance spectra allow to evidence that rust layers have a higher conductivity with respect to anodic films due to the presence of highly doped iron oxide layers. The use of Mott-Schottky theory to model the dependence of oxide capacitance as function of potential is critically discussed.

Materials scienceBand gapGeneral Chemical EngineeringIron oxide02 engineering and technologyWeathering steelengineering.materialConductivity010402 general chemistry01 natural sciencesCorrosionchemistry.chemical_compoundElectrochemistryPolarization (electrochemistry)Band gap Carbon steel EIS Mott–Schottky theory Semiconductorsbusiness.industryDoping021001 nanoscience & nanotechnology0104 chemical sciencesSemiconductorSettore ING-IND/23 - Chimica Fisica ApplicataSettore ING-IND/22 - Scienza E Tecnologia Dei MaterialichemistryChemical engineeringengineering0210 nano-technologybusiness
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Photocurrent spectroscopy in passivity studies

2018

The aim of this article is to present photocurrent spectroscopy as useful in situ technique for the physicochemical characterization of passive films and corrosion layers. The response of (both amorphous and crystalline) semiconductor/electrolyte junction under irradiation is treated and discussed in order to get information about solid-state properties such as band gap and flat band potential. The possibility to use Photocurrent Spectroscopy (PCS), in a quantitative way, to get information on the composition of corrosion layers is discussed through a semiempirical correlation between the band gap of the oxides (or hydroxides) and the difference of electronegativity of their constituents. F…

Materials scienceBand gapPassive film/electrolyte energetics02 engineering and technologyElectrolyte01 natural sciencesCorrosionElectronegativityPhotoelectrochemistryOptical band gap0103 physical sciencesSpectroscopy010302 applied physicsPhotocurrentBilayer filmsbusiness.industryCorrosion layersOxide layersAmorphous semiconductors021001 nanoscience & nanotechnologyAmorphous solidSemiconductorHydroxide layersSettore ING-IND/23 - Chimica Fisica ApplicataOptoelectronicsPassive films0210 nano-technologybusinessFlat band potential
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A Very Low Band Gap Diketopyrrolopyrrole-Porphyrin Conjugated Polymer

2017

International audience; A porphyrin-diketopyrrolopyrrole-containing polymer (poly(porphyrin-diketopyrrolopyrrole) (PPDPP)) shows impressive molar absorption coefficients from lambda=300 to 1000 nm. The photophysical and structural properties of PPDPP have been studied. With PPDPP as the electron donor and [ 6,6]phenyl C-71 butyric acid methyl ester (PC71BM) as the electron acceptor, the bulk heterojunction polymer solar cell showed overall power conversion efficiencies of 4.18 and 6.44% for as-cast and two-step annealing processed PPDPP: PC71BM (1: 2) active layers, respectively. These results are quite impressive for porphyrin-containing polymers, especially when directly included in the p…

Materials scienceBand gapbuilding-blockporphyrinoidsElectron donorthin-film transistors02 engineering and technologyConjugated system010402 general chemistryPhotochemistry[ CHIM ] Chemical Sciences01 natural sciencesPolymer solar cellheterojunction solar-cellschemistry.chemical_compound[CHIM]Chemical Sciencessmall-moleculepolymerschemistry.chemical_classificationsemiconducting polymerscharge transferGeneral ChemistryPolymerChromophoreElectron acceptorside-chains021001 nanoscience & nanotechnologyPorphyrinphotovoltaic properties0104 chemical sciencesphotodynamic therapychemistryorganic photovoltaics0210 nano-technologyabsorptionperformanceconjugationChemPlusChem
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Pressure effects on the electronic and optical properties ofAWO4wolframites (A =Cd, Mg, Mn, and Zn): The distinctive behavior of multiferroic MnWO4

2012

The electronic band-structure and band-gap dependence on the $d$ character of ${A}^{2+}$ cation in $A$WO${}_{4}$ wolframite-type oxides is investigated for different compounds ($A$ $=$ Mg, Zn, Cd, and Mn) by means of optical-absorption spectroscopy and first-principles density-functional calculations. High pressure is used to tune their properties up to 10 GPa by changing the bonding distances establishing electronic to structural correlations. The effect of unfilled $d$ levels is found to produce changes in the nature of the band gap as well as its pressure dependence without structural changes. Thus, whereas Mg, Zn, and Cd, with empty or filled $d$ electron shells, give rise to direct and…

Materials scienceBand gapbusiness.industryAnalytical chemistryElectron shellCondensed Matter PhysicsPressure coefficientElectronic Optical and Magnetic MaterialsSemiconductorDirect and indirect band gapsMultiferroicsAbsorption (logic)SpectroscopybusinessPhysical Review B
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Novel 2D boron nitride with optimal direct band gap: A theoretical prediction

2022

Abstract A novel structurally stable 2D-boron nitride material, namely di-BN, is predicted by means of the first-principles simulations. This monolayer BN system is composed of the azo (N-N) and diboron (B-B) groups. Its in-plane stiffness is close to the monolayer h-BN. Usually, the boron nitride materials are semiconductors with large band gaps. However, the monolayer di-BN possesses a moderate direct band gap of 1.622 eV obtained from our HSE06 calculation. Although the GW correction enlarges the band gap to 2.446 eV, this value is still in the range of the visible light. The detailed investigation of its band arrangement reveals that this material is able to product hydrogen molecules i…

Materials scienceBand gapbusiness.industryGeneral Physics and AstronomySurfaces and InterfacesGeneral ChemistryNitrideCondensed Matter PhysicsSurfaces Coatings and Filmschemistry.chemical_compoundPhosphoreneSemiconductorchemistryBoron nitrideMonolayerOptoelectronicsDirect and indirect band gapsCharge carrierbusinessApplied Surface Science
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Controlled delivery using oligonucleotide-capped mesoporous silica nanoparticles.

2010

Materials scienceBase SequenceOligonucleotideMolecular Sequence DataOligonucleotidesNanoparticleNanotechnologyGeneral ChemistryGeneral MedicineMesoporous silicaSilicon DioxideModels BiologicalCatalysisDrug Delivery SystemsControlled deliveryNanoparticlesPorosityAngewandte Chemie (International ed. in English)
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Physical Fundamentals of Biomaterials Surface Electrical Functionalization

2020

This article is focusing on electrical functionalization of biomaterial&rsquo

Materials scienceBiocompatibilitySurface finishElectric chargelcsh:TechnologyArticleoxygen vacanciesSurface roughnesssurfacepoint defectsGeneral Materials ScienceWork functionSurface chargelcsh:Microscopylcsh:QC120-168.85roughnesslcsh:QH201-278.5business.industrylcsh:Thydroxyapatiteelectrical chargeSemiconductorChemical engineeringlcsh:TA1-2040Surface modificationfunctionalizationlcsh:Descriptive and experimental mechanicslcsh:Electrical engineering. Electronics. Nuclear engineeringbusinesslcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971biomaterialsMaterials
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Water-dispersed semiconductor nanoplatelets with high fluorescence brightness, chemical and colloidal stability

2019

Quasi-two dimensional semiconductor nanoplatelets (NPLs) exhibit high spectral brightness and large absorption cross sections, making them promising for various applications including bioimaging. However, the synthesis of NPLs takes place in organic solvents, therefore they require phase transfer in order to use them in aqueous environments. The phase transfer of NPLs has so far been challenging with few examples in literature. This is likely due to the facile agglomeration of materials with plate-like geometries during the coating procedure. Here we demonstrate how to overcome agglomeration and transfer NPLs, individually coated with amphiphilic polymer chains, to aqueous phase. Upon one a…

Materials scienceBiomedical EngineeringNanoparticleengineering.materialFluorescenceMiceColloidCoatingQuantum DotsAnimalsGeneral Materials ScienceFluorescent DyesAqueous solutionbusiness.industryAqueous two-phase systemWaterGeneral ChemistryGeneral MedicineFluorescenceRAW 264.7 CellsSemiconductorChemical engineeringQuantum dotSolventsengineeringbusinessJournal of Materials Chemistry B
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