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Flexible MgO-Based Magnetic Tunnel Junctions on Silicon Substrate
2018
Flexible electronic devices are emerging in many areas, providing novel features and creating new applications [1]. Due to their ubiquitous utilization, flexible magnetic sensors [2] play a critical part in this development. In particular, magnetic tunnel junctions (MTJs) are of great interest, because of advantages like low power consumption or high sensitivity. We report the development of flexible MTJs on a silicon substrate fabricated by a low-cost batch process [3]. Thereby, conventionally fabricated MTJ devices are transformed into flexible ones by thinning down the silicon wafer from 500 μm to 5 μm. This process leads to thin, bendable silicon devices, while maintaining their origina…
Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors
2004
The fabrication of (Al,Ga)N-based metal–semiconductor–metal (MSM) photovoltaic detectors requires the growth of high-quality (Al,Ga)N films. Inserting a low-temperature deposited buffer layer enables the growth of an epitaxial layer with a reduced density of defects. Two structures using GaN and AlN buffer layers have been deposited by low-pressure metalorganic chemical vapor deposition and used to fabricate MSM interdigitated detectors. The devices have been characterized to investigate the effects of the buffer layers on the detector performances.
Printing ZnO Inks: From Principles to Devices
2020
Solution-based printing approaches permit digital designs to be converted into physical objects by depositing materials in a layer-by-layer additive fashion from microscale to nanoscale resolution. The extraordinary adaptability of this technology to different inks and substrates has received substantial interest in the recent literature. In such a context, this review specifically focuses on the realization of inks for the deposition of ZnO, a well-known wide bandgap semiconductor inorganic material showing an impressive number of applications in electronic, optoelectronic, and piezoelectric devices. Herein, we present an updated review of the latest advancements on the ink formulations an…
Electronic structure, lattice dynamics, and optical properties of a novel van der Waals semiconductor heterostructure: InGaSe2
2017
There is a growing interest in the property dependence of transition metal dichalcogenides as a function of the number of layers and formation of heterostructures. Depending on the stacking, doping, edge effects, and interlayer distance, the properties can be modified, which opens the door to novel applications that require a detailed understanding of the atomic mechanisms responsible for those changes. In this work, we analyze the electronic properties and lattice dynamics of a heterostructure constructed by simultaneously stacking InSe layers and GaSe layers bounded by van der Waals forces. We have assumed the same space group of GaSe, $P\overline{6}m2$ as it becomes the lower energy conf…
Mathematical modelling of the industrial growth of large silicon crystals by CZ and FZ process
2003
The present paper gives an overview of the complex mathematical modelling of industrial Czochralski (CZ) and floating‐zone (FZ) processes for the growth of large silicon single crystals from melt. Extensive numerical investigations of turbulent Si‐melt flows in large diameter CZ crucibles, global thermal calculations in growth facilities and analysis of the influence of various electromagnetic fields on CZ process are presented. For FZ process, a complex system of coupled 2D and 3D mathematical models is presented to show the possibilities of modelling from the calculation of the molten zone shape till the resistivity distribution in the grown crystal. A special developed program code is pr…
Subwavelength imaging of field confinement in a waveguide-integrated photonic crystal cavity
2005
A photonic crystal microcavity is designed to obtain an original field distribution inside the cavity and the structure is etched inside a silicon-on-insulator waveguide. Spectral location of the photonic band gap and cavity resonance are identified by using transmittance measurements and by analyzing the light collected by a scanning near-field optical microscope probe exactly positioned on the center of the cavity. The results obtained with the two techniques are in very good agreement. Then the near-field distribution above the device is mapped and light confinement inside the cavity is evidenced. Moreover, this confined light presents some remarkable patterns which clearly correspond to…
Experimental and Theoretical Study of the Field Induced Phase Separation in Electro- and Magnetorheological Suspensions
1999
We present here the study of field induced phase separation in E.R. and M.R. fluids. Two thermodynamic models — one for the formation of chais of particles and the other for phase separation are presented and compared with experimental results obtained with two kinds of suspensions. One was made of silica particles in silicone oil and the other was made of magnetic polystyrene particles in water. In the presence of a flow the phase separation occurs with the dense phase forming a regular pattern of stripes. The dependence of the period of these stripes on the intensity of the magnetic field is well reproduced by the same kind of thermodynamic model if we add the effect of normal stresses i…
Ruthenium pentamethylcyclopentadienyl mesitylene dimer: a sublimable n-dopant and electron buffer layer for efficient n-i-p perovskite solar cells
2019
Electron-transport materials such as fullerenes are widely used in perovskite solar cells to selectively transfer the photogenerated electrons to the electrodes. In order to minimize losses at the interface between the fullerene and the electrode, it is important to reduce the energy difference between the transport level of the two materials. A common approach to reduce such energy mismatch is to increase the charge carrier density in the semiconductor through doping. A variety of molecular dopants have been reported to reduce (n-dope) fullerenes. However, most of them are either difficult to process or extremely air sensitive, with most n-dopants leading to the formation of undesirable si…
New concepts and applications in macromolecular chemistry of fullerenes
2010
A new classification on the different types of fullerene-containing polymers is presented according to their different properties and applications they exhibit in a variety of fields. Because of their interest and novelty, water-soluble and biodegradable C(60)-polymers are discussed first, followed by polyfullerene-based membranes where unprecedented supramolecular structures are presented. Next are compounds that involve hybrid materials formed from fullerenes and other components such as silica, DNA, and carbon nanotubes (CNTs) where the most recent advances have been achieved. A most relevant topic is still that of C(60)-based donor-acceptor (D-A) polymers. Since their application in pho…
Ultra-broad spectral photo-response in FePS3 air-stable devices
2021
Van der Waals materials with narrow energy gaps and efficient response over a broadband optical spectral range are key to widen the energy window of nanoscale optoelectronic devices. Here, we characterize FePS as an appealing narrow-gap p-type semiconductor with an efficient broadband photo-response, a high refractive index, and a remarkable resilience against air and light exposure. To enable fast prototyping, we provide a straightforward guideline to determine the thickness of few-layered FePS nanosheets extracted from the optical transmission characteristics of several flakes. The analysis of the electrical photo-response of FePS devices as a function of the excitation energy confirms a …