Search results for "MT"
showing 10 items of 2759 documents
Molecular dynamics simulations of nanometric metallic multilayers: Reactivity of the Ni-Al system
2011
The reactivity of a layered Ni-Al-Ni system is studied by means of molecular dynamics simulations, using an embedded-atom method type potential. The system, made of an fcc-Al layer embedded in fcc-Ni, is initially thermalized at the fixed temperature of 600 K. The early interdiffusion of Ni and Al at interfaces is followed by the massive diffusion of Ni in the Al layer and by the spontaneous phase formation of $B2$-NiAl. The solid-state reaction is associated with a rapid system heating, which further enhances the diffusion processes. For longer times, the system may partly lose some its $B2$-NiAl microstructure in favor of the formation of $L{1}_{2}$-${\mathrm{Ni}}_{3}\mathrm{Al}$. This st…
An investigation into the fracture behaviour of honeycombs with density gradients
2020
International audience; In this study we perform an experimental and computational investigation about the fracture behaviour of polymer honeycombs presenting gradients in terms of lattice density. Such lattice relative density variations are introduced with the aim of mimicking the micro-morphology encountered in some natural materials, such as several kinds of woods, which seems related to the ability of the corresponding macro-material to delay the propagation of fracture under certain conditions. Starting from the conclusions of previous computational analyses, we perform a few experimental tensile tests on ABS model honeycombs obtained by additive manufacturing, with the aim of getting…
Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
2011
Abstract The growth of GaN nanowires by means of plasma assisted molecular beam epitaxy directly on Si(1 1 1) has been investigated as a function of temperature. Statistical analysis of scanning electron microscopy pictures taken for different growth temperatures has revealed that density, diameter, length and length dispersion of nanowires were strongly dependent on temperature. Length dispersion, in particular, was found to be significant at high temperature. These features have been assigned to the different duration of the nucleation process with temperature, namely to the dependence with temperature of the time necessary for the size increase of the three-dimensional precursors up to a…
Raman characterization of Pb2Na1−xLaxNb5−xFexO15 and Pb0.5(5−x)LaxNb5−xFexO15 (0≤x≤1) solid solutions
2011
Abstract The ferroelectric compounds Pb 2 Na 1− x La x Nb 5− x Fe x O 15 and Pb 0.5(5− x ) La x Nb 5− x Fe x O 15 (0≤ x ≤1) with the tungsten bronze type structure have been investigated using Raman spectroscopy. The evolution of the spectra as a function of composition at room temperature is reported. In the frequency range 200–1000 cm −1 three main A 1 phonons around 240 ( υ 1 ), 630 ( υ 2 ) and 816 ( υ 3 ) cm −1 were observed. The broadening of the Raman lines for high values of x originates from a significant structural disorder. This is in good agreement with the relaxor character of these compositions. The lowest-frequency part of the spectra, below 180 cm −1 , reveals a structural ch…
Single crystal-like thin films of blue bronze
2021
Abstract Pulsed laser deposition technique was employed to grow thin films of K 0.3 M o O 3 on A l 2 O 3 (1-102) and S r T i O 3 (510) substrates. Structural and imaging characterization revealed good quality films with well oriented grains of few microns in length. Both non-selective (transport) and order-selective (femtosecond pump-probe spectroscopy) probes revealed charge density wave properties that are very close to those of the single crystals. The films exhibit metal-semiconductor phase transition in resistivity, pump-probe data show phase transition at the same temperature as the single crystal and the threshold for the photo-induced phase transition is approximately the same as in…
Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire
2020
A detailed structural investigation of the semiconductor-to-metal transition (SMT) in vanadium dioxide thin films deposited on sapphire substrates by pulsed laser deposition was performed by in situ temperature-dependent X-ray diffraction (XRD) measurements. The structural results are correlated with those of infrared radiometry measurements in the SWIR (2.5-5 μm) and LWIR (8-10.6 μm) spectral ranges. The main results indicate a good agreement between XRD and optical analysis, therefore demonstrating that the structural transition from monoclinic to tetragonal phases is the dominating mechanism for controlling the global properties of the SMT transition. The picture that emerges is a SMT tr…
High-frequency EPR study on Cu4Cu- and Co4Co-metallacrown complexes
2019
Abstract High-frequency/high-field electron paramagnetic resonance studies on two homonuclear 12-MC-4 metallacrown complexes Cu4Cu and Co4Co are presented. For Cu4Cu, our data imply axial-type g-anisotropy with g x = 2.03 ± 0.01 , g y = 2.04 ± 0.01 , and g z = 2.23 ± 0.01 , yielding g = 2.10 ± 0.02 . No significant zero field splitting (ZFS) of the ground state mode is observed. In Co4Co, we find a m S = ± 3 / 2 ground state with g = 2.66 . The data suggest large anisotropy D of negative sign.
Reversed polarized emission in highly strained a-plane GaN/AlN multiple quantum wells
2010
The polarization of the emission from a set of highly strained $a$-plane GaN/AlN multiple quantum wells of varying well widths has been studied. A single photoluminescence peak is observed that shifts to higher energies as the quantum well thickness decreases due to quantum confinement. The emitted light is linearly polarized. For the thinnest samples the preferential polarization direction is perpendicular to the wurtzite $c$ axis with a degree of polarization that decreases with increasing well width. However, for the thickest well the preferred polarization direction is parallel to the $c$ axis. Raman scattering, x-ray diffraction, and transmission electron microscopy studies have been p…
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: effect of thermal annealing
2013
International audience; ZnCdO nanowires with up to 45% Cd are demonstrated showing room temperature photoluminescence (PL) down to 2.02 eV and a radiative efficiency similar to that of ZnO nanowires. Analysis of the microstructure in individual nanowires confirms the presence of a single wurtzite phase even at the highest Cd contents, with a homogeneous distribution of Cd both in the longitudinal and transverse directions. Thermal annealing at 550 C yields an overall improvement of the PL, which is blue-shifted as a result of the homogeneous decrease of Cd throughout the nanowire, but the single wurtzite structure is fully maintained.
High-pressure x-ray-absorption study of GaSe
2002
The III-VI layered semiconductor InSe has been studied by high-pressure single crystal x-ray absorption spectroscopy up to a maximum pressure of 14 GPa. The In-Se distance has been measured in both the low- pressure layered phase and the high-pressure NaCl phase. The bond compressibility in the layered phase is lower than the ``a'' crystallographic parameter compressibility, which implies an increase of the angle between the In-Se bond and the layer plane. Under plausible hypothesis, a description of the evolution of the whole structure with pressure is given. In particular, the intralayer distance is observed to increase with increasing pressure. A plausible precursor defect and a simple m…