Search results for "Metallurgy"
showing 10 items of 1419 documents
Role ofH2Oin the thermal annealing of theEγ′center in amorphous silicon dioxide
2009
The model for the annealing of a radiation-induced point defect in silica, the ${\text{E}}_{\ensuremath{\gamma}}^{\ensuremath{'}}$ center, is identified in the temperature range $(150--550)\ifmmode^\circ\else\textdegree\fi{}\text{C}$. Thermal treatments in controlled atmospheres of water vapor, oxygen, or helium of irradiated amorphous silicon dioxide are carried out. Direct experimental evidences that the annealing of the ${\text{E}}_{\ensuremath{\gamma}}^{\ensuremath{'}}$ center is caused by a reaction with diffusing water molecules are found. A rate equation system describing this annealing process is inferred, and its solutions are compared with experimental data to obtain quantitative …
Redox reactions in the Pt/TiO2–WO3/SiO2 planar system
2014
Abstract The thermal behavior of the titanium–tungsten adhesive layer (30–70 at.%) deposited on a SiO2 substrate followed by a thicker Pt layer was investigated. The resulting Pt/TiW/SiO2 planar system was annealed under air or vacuum. Morphological and chemical characterizations at different stages of the annealing, as a function of several parameters such as treatment atmosphere, annealing temperature and thickness of the Pt film were performed through surface science analyses. When annealing under air, even at mild temperature (773 K), the whole interlayer oxidizes while a low amount of tungsten diffuses through platinum film. This phenomenon is related to tungsten oxidation which acts a…
Fast-neutron-induced and as-grown structural defects in magnesium aluminate spinel crystals with different stoichiometry
2019
Abstract Several hole-type paramagnetic defects (a hole localized at a regular oxygen ion near charged structural defect/defects) have been revealed in fast-neutron-irradiated MgO⋅2.5Al2O3 single crystals using the EPR method. Three of them (a dominant V1 and small amount of V2 and V22) were recently revealed in a neutron-irradiated stoichiometric MgAl2O4, while a novel V4 center, ascribed to a hole in a form of O− ion nearby a complex of a magnesium vacancy and a positively charged antisite defect (V4 ≡ O–‑VMg‑Al|Mg), was created by fast neutrons only in a nonstoichiometric single crystal. The pulse annealing of the EPR signal of these centers was compared to that of radiation induced opti…
Zinc oxide nanocrystals as electron injecting building blocks for plastic light sources
2012
Hybrid inorganic–organic light emitting devices (HyLEDs) employing ZnO nanocrystals as one of their metal oxide contacts lead to very bright devices on plastic substrates with performances superior to those obtained from the rigid counterparts employing planar films of bulk ZnO. The superior performance is related to the increase in the bandgap of the ZnO nanocrystals caused by quantum confinement effects. We demonstrate that this effect diminishes with increasing annealing temperature of the ZnO nanocrystal layer due to a gradual decrease of the bandgap towards the bulk ZnO value. Therefore, best performances were obtained with room temperature processing of the ZnO nanocrystals.
Ordering and dewetting in spin-coated films of a liquid crystalline main chain polymer
2006
Abstract The ordering of spin-coated films of a main-chain smectic liquid crystalline polymer with an azobenzene group connected by flexible spacers to a phenyl malonate unit has been studied as a function of film thickness using scanning force microscopy and UV/Vis spectroscopy. Already the as-prepared films are characterized by a significant out-of-plane orientation of the azobenzene groups. Annealing of films thicker than 7 nm results in aggregation and homeotropical alignment of azobenzene groups forming smectic layers parallel to the substrate. An optically isotropic mesophase was found upon annealing in the temperature range of smectic mesophase. Films thinner than the bilayer thickne…
Study of the defects in La3Ta0.5Ga5.5O14 single crystals
2016
Abstract Defects that are formed during crystal growth pose a serious obstacle for potential application of La 3 Ga 5.5 Ta 0.5 O 14 (LGT) as a laser or piezoelectric crystal. We have performed the study of the defects origin in LGT crystals grown in different atmospheres using optical, EPR and time-resolved luminescence characterization methods. The absorption bands detected in the transparency region at 290, 360 and 490 nm ( T =300 K) demonstrate different dependence on crystal annealing in vacuum and air. EPR analysis demonstrated that the defects responsible for these bands are non-paramagnetic. X-ray irradiation results in hole trapping by oxygen ions thus forming O − centers perturbed …
Dielectric properties of reactor irradiated ferroelectric thin films
2001
Abstract Radiation effects in highly oriented Pb1Zr0.53Ti0.47O3 (PZT), Pb0.94La0.06Zr0.65Ti0.35O3 (PLZT-6), and PbiZriO3 (PZ) ferroelectric (FE) and antiferroelectric (AF) thin films are investigated in view of their possible application as a temperature sensitive element in a new bolometer system for ITER (International Thermonuclear Experimental Reactor). The dielectric properties (i.e. hysteresis loops, dielectric constants) of the films were investigated in a frequency range from 20 to 105 Hz and at temperatures up to 450 °C, before and after neutron irradiation to a neutron fluence of 5×1021 m−2 (E<0.1 MeV). The dielectric constant was measured during cooling with 1.7 °Cmin−1. The diel…
Atomic layer deposition and characterization of biocompatible hydroxyapatite thin films
2009
Abstract Atomic layer deposition (ALD) was used to produce hydroxyapatite from Ca(thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) and (CH 3 O) 3 PO onto Si(100) and Corning (0211). Film crystallinity, stoichiometry, possible impurities and surface morphology were determined. The as-deposited films contained significant amounts of carbonate impurities however, annealing at moist N 2 flow reduced the carbonate content even at 400 °C. The as-deposited Ca–P–O films were amorphous but rapid thermal annealing promoted the formation of the hydroxyapatite phase. Mouse MC 3T3-E1 cells were used for the cell culture experiments. According to the bioactivity studies cell proliferation was enhanc…
Luminescence of Er/Yb and Tm/Yb doped FAp nanoparticles and ceramics
2015
The nanoparticles of hydroxiapatite and fluorapatite doped with Er/Yb and Tm/Yb were synthesized and characterized by FTIR, XRD, SEM and TEM methods. The results of up-conversion luminescence studies were presented for the samples as prepared, annealed at 500°C and at 900-1000 °C. At annealing above 800°C the ceramic state was formed. It is shown that fluorapatite host is more appropriate than hydroxiapatite host for rare ions luminescence and up-conversion processes. The post preparing annealing of nanarticles significantly enhanced the luminescence intensity. The Tm/Yb doped fluorapatite shows intense up-conversion luminescence in 790-800 nm spectral region and is potentially useful for b…
Rapid Microwave Preparation of Thermoelectric TiNiSn and TiCoSb Half-Heusler Compounds
2012
The 18-electron ternary intermetallic systems TiNiSn and TiCoSb are promising for applications as high-temperature thermoelectrics and comprise earth-abundant, and relatively nontoxic elements. Heusler and half-Heusler compounds are usually prepared by conventional solid state methods involving arc-melting and annealing at high temperatures for an extended period of time. Here, we report an energy-saving preparation route using a domestic microwave oven, reducing the reaction time significantly from more than a week to one minute. A microwave susceptor material rapidly heats the elemental starting materials inside an evacuated quartz tube resulting in near single phase compounds. The initia…