Search results for "Resistivity"
showing 10 items of 385 documents
Electronic transport properties of electron- and hole-doped semiconductingC1bHeusler compounds:NiTi1−xMxSn(M=Sc,V)
2010
The substitutional series of Heusler compounds ${\text{NiTi}}_{1\ensuremath{-}x}{M}_{x}\text{Sn}$ (where $M=\text{Sc},\text{V}$ and $0lx\ensuremath{\le}0.2$) were synthesized and investigated with respect to their electronic structure and transport properties. The results show the possibility to create $n$-type and $p$-type thermoelectrics within one Heusler compound. The electronic structure and transport properties were calculated by all-electron ab initio methods and compared to the measurements. Hard x-ray photoelectron spectroscopy was carried out and the results are compared to the calculated electronic structure. Pure NiTiSn exhibits massive ``in gap'' states containing about 0.1 ele…
Direct observation of Drude behavior in the heavy-fermion by broadband microwave spectroscopy
2005
Abstract Previous optical studies on the heavy-fermion system UPd 2 Al 3 down to frequencies of about 1 cm - 1 ( = 30 GHz ) revealed a well-pronounced pseudogap at low frequencies (below 3 cm - 1 ) that was attributed to magnetic correlations. Thus, the optical conductivity at even lower frequencies is of notable interest because the Drude roll-off (the high-frequency characteristic of a metal which will give information on the quasiparticle dynamics) remained hidden at extremely low frequencies. Using a novel cryogenic broadband microwave spectrometer employing the Corbino geometry we have studied the complex optical conductivity of UPd 2 Al 3 thin films in the frequency range from 45 MHz …
Thin film preparation of the low charge carrier density Kondo system CeSb
1999
Abstract We report the thin film preparation of CeSb by means of molecular beam epitaxy (MBE) onto sapphire (1 1 −2 0) substrates. Above a substrate temperature of about 300°C CeSb crystallizes in (0 0 1) orientation. The growth mode of the films changes from a fiber textured to an epitaxial mode for deposition temperatures above 900°C. Although the specific resistivity is enhanced the characteristic energy scales, like the Kondo temperature TK and the magnetic ordering temperature TN, are not changed significantly.
Magnetoresistance and Phase Diagram of Thin-Film UNi2Al3
2011
We study the dc resistivity of UNi2Al3 thin films as a function of temperature and magnetic field. We focus on the temperature range around the antiferromagnetic transition (TN \approx 4 K in zero applied field). From a clear signature of TN in the dc resistance along the crystallographic a-direction, we extract the shape of the magnetic phase diagram. Here we find quantitative differences in comparison to previous studies on bulk crystals.
Electronic properties of *-oriented thin films
2007
Abstract To perform high precision measurements of the transport anisotropy, epitaxial, a *-oriented thin films of UPd 2 Al 3 have been prepared on LaAlO 3 (1 1 0) substrates. The critical temperature T c ≈ 1.75 K and the upper critical field B c 2 ≈ 3 T are comparable to typical bulk values. In contrast to UNi 2 Al 3 , we observed only a weak anisotropy in directional resistivity measurements, especially no dependence of the superconducting transition temperature on the direction of the applied current. Hall effect measurements show two characteristic minima at T = 16 K ≈ T N and T ≈ 6 K , which corresponds to features seen in earlier measurements on c *-oriented films.
Temperature Dependence of Electronic and Magnetic Properties of (DOEO)<sub>4</sub>[HgBr<sub>4</sub>]·TCE Single Crystals
2015
The temperature dependence of electronic and magnetic properties of the organic charge-transfer salt (DOEO)4[HgBr4]·TCE was investigated using magnetometry. The magnetic susceptibility shows a maximum at 40 K followed by an onset of a pronounced increase at 70 K and a constant behavior above 120 K. Implications on the charge carrier density are discussed. Combining the magnetometry with resistivity and ESR measurements we propose a sequence of insulating, metallic and semiconducting behavior with increasing temperature. Our results indicate that (DOEO)4[HgBr4]·TCE is close to the boundary between an insulating and conducting ground state.
Tuning the carrier concentration for thermoelectrical application in the quaternary Heusler compound Co2TiAl(1−x)Six
2010
The family of half-metallic ferromagnets Co2TiZ exhibits exceptional transport properties. The investigated compounds Co2TiAl(1−x)Six (x = 0.25, 0.5, 0.75) show Curie temperatures (TCs) that vary between 250 and 350 K, depending on the composition. Above TC the Seebeck coefficient remains constant. This makes them promising candidates for thermoelectric devices such as thermocouples with a tunable working range. The electrical resistivity data show an anomaly at TC which is attributed to changes in the electronic structure and therefore in the carrier concentration.
Impedance spectroscopy studies of SrMnO3, BaMnO3and Ba0.5Sr0.5MnO3ceramics
2014
The impedance spectrum of hexagonal SrMnO3, rhombohedral BaMnO3 and orthorhombic Ba0.5Sr0.5MnO3 ceramics, synthesized by conventional high-temperature method, was studied in a wide temperature and frequency range. The complex impedance plots of Z″ versus Z′ pointed to two contributions originating from grains and grain boundaries. The parameters of electric equivalent circuit were calculated. The semicircles related to the grain boundary are located at the lower frequency side due to higher resistivity and capacity of the grain boundaries. The Ba0.5Sr0.5MnO3 ceramics is characterized by the lowest activation energy related to the grains. The conductivities σac of all the investigated sample…
Conductivity of the two-dimensional electron gas atLaAlO3/SrTiO3interface
2017
We propose an analytical theory of metallic conductivity in the two-dimensional (2D) ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ (LAO/STO) interface. For that we consider the electron-phonon interaction at the interface. The electronic part is taken from our previous work [Phys. Chem. Chem. Phys. 18, 2104 (2016)], considering the conditions for the interfacial charge carrier (electron or hole) to become itinerant. The second ingredient deals with the atomic oscillations localized near the interface and decaying rapidly at its both sides, which can be regarded as 2D acoustic phonons. The dispersion of such phonons depends on the characteristics of phonon spectra of LAO and STO. Calculating t…
Structural characterization and anomalous Hall effect of Rh2MnGe thin films
2015
Abstract We present the preparation, structural investigations, and transport properties of L21-ordered epitaxial Rh2MnGe Heusler thin films grown by pulsed laser deposition. The films grow (1 0 0) oriented on (1 0 0)MgO substrate with [ 0 1 1 ] Rh 2 MnGe ∥ [ 0 1 0 ] MgO . The rocking curve widths of (4 0 0) reflections are below 1° and decrease with increasing deposition temperature. The flat surface of the thin films allowed lithographic patterning enabling quantitative magnetotransport measurements. We measured resistivity and the Hall effect. We suggest skew scattering as the dominant effect in the temperature dependent anomalous Hall effect, consistent with the theoretically expected s…