Search results for "Resistivity"
showing 10 items of 385 documents
Analysis of thermally induced flows in the laboratory by geoelectrical 3-D tomography
2010
[1] Many natural bodies as well as materials inside industrial installations, such as the Earth's mantle and the glass inside melting furnaces, exchange matter through convection. These processes result from differences in temperature, density, and chemical concentration. In this analysis, we focus on the visualization of thermally driven flows in the laboratory. In nature and in industrial installations, it is difficult to measure the temperature inside the object of interest directly. We benchmark a new DC-geoelectrical 3-D tomography method for temperature measurements that allows obtaining temperature values without influencing the flow pattern. For verification of the method, we use di…
Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals
1997
Abstract A computer simulation is carried out to study the dopant concentration fields in the molten zone and in the growing crystal for the floating zone (FZ) growth of large (> 100mm) Si crystals with the needle-eye technique and with feed/crystal rotation. The mathematical model developed in the previous work is used to calculate the shape of the molten zone and the velocity field in the melt. The influence of melt convection on the dopant concentration field is considered. The significance of the rotation scheme of the feed rod and crystal on the dopant distribution is investigated. The calculated dopant concentration directly at the growth interface is used to determine the normalized …
A parametric analysis of the transient behavior of lightning protection systems
2005
The paper have the purpose of investigate the influence of different parameters to enable better understanding of the transient performance of complex lightning protection systems (LPS). Lightning discharges constitute the major source of atmospheric or natural noise that can interfere with electric and electronic installations. The electromagnetic characterisation of the LPS environment plays a fundamental role in order to prevent unwanted coupling phenomena that may generate abnormal signals, electric stresses dangerous for the insulation of electric components, disruptive discharges and danger to persons. The model, developed by the authors, is based on a field-approach: the numerical so…
Ti2Sn3: A Novel Binary Intermetallic Phase, Prepared by Chemical Transport at Intermediate Temperature
2000
Ti2Sn3 was obtained by chemical transport using iodine as the transport agent in a sealed quartz ampule at 500 °C. Its crystal structurea new type structurewas determined via single-crystal structure analysis to be orthorhombic, space group Cmca, a = 595.56(4), b = 1996.4(2), c = 702.81(5) pm, V = 835.6(1) × 106 pm3, and Z = 8. The structure can be derived from a three-dimensional condensation of a single polyhedron, which comprises a Ti atom in the center, surrounded by seven Sn and four Ti atoms forming a tri-capped square antiprism. Supporting the results of the self-consistent band structure calculations, Ti2Sn3 is a metallic p-type conductor, exhibiting Pauli paramagnetism and a specif…
Tripotential data processing for HES interpretation
1994
In this paper some methods are proposed and compared to correct the experimental measurements for preliminary processing of tripotential data which are acquired for HES prospecting. However, the use of those methods should be based upon an accurate analysis of all experimental data. Such an analysis ought to involve: 1) an estimate of the averaged measurement errors with their variance and distribution in both the space and the three apparent-resistivities domains; 2) the choice of a resistivity model capable of describing the actual volume under study. The differences among the three values of apparent resistivity measured on a point are generally influenced both by the resistivity distrib…
Epitaxial growth and thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films
2011
Abstract Due to their exceptional thermoelectric properties Half-Heusler alloys like MNiSn (M = Ti,Zr,Hf) have moved into focus. The growth of single crystalline thin film TiNiSn and Zr 0.5 Hf 0.5 NiSn by dc magnetron sputtering is reported. Seebeck and resistivity measurements were performed and their dependence on epitaxial quality is shown. Seebeck coefficient, specific resistivity and power factor for Zr 0.5 Hf 0.5 NiSn at room temperature were measured to be 63 μV K − 1 , 14.1 μΩ m and 0.28 mW K − 2 m − 1 , respectively. Multilayers of TiNiSn and Zr 0.5 Hf 0.5 NiSn are promising candidates to increase the thermoelectric figure-of-merit by decreasing thermal conductivity perpendicular …
Electric and dielectric properties of nanostructured stoichiometric and excess-iron Ni–Zn ferrites
2013
In this paper, we report a study of the effect of excess iron on structural, microstructural, electric and dielectric properties of the nanostructured Ni–Zn ferrites Ni1−xZnxFe2+zO4−δ of different compositions with x = 0, 0.3, 0.5, 0.7, 1 and z = 0, 0.1. The structural and microstructural properties are estimated from x-ray diffraction and atomic force microscopy (AFM) data. The average grain size, evaluated from AFM topographical analysis, is found to be below 70 nm. The samples exhibit low values of dielectric constant and dielectric loss and a high resistivity. Contrary to earlier conclusions regarding microstructured Ni–Zn ferrites, in nanostructured Ni–Zn ferrites sintered at relativel…
Optimization of thermal coefficient of electrical resistivity of Co-Ti-Si thin films due to laser-induced chemical reactions
2001
The CO2 laser induced optimization of the thermal coefficient of electrical resistivity in Co-Ti-Si thin films is realized. The X-ray diffraction studies of the annealed Co- Ti-Si films confirm that the changes of electrical properties are related to forming a small structure of crystalline compounds Ti5Si3 and CoSi2 in an amorphous matrix.
LiCrO2 Under Pressure: In-Situ Structural and Vibrational Studies
2018
The high-pressure behaviour of LiCrO2, a compound isostructural to the battery compound LiCoO2, has been investigated by synchrotron-based angle-dispersive X-ray powder diffraction, Raman spectroscopy, and resistance measurements up to 41, 30, and 10 Gpa, respectively. The stability of the layered structured compound on a triangular lattice with R-3m space group is confirmed in all three measurements up to the highest pressure reached. The dependence of lattice parameters and unit-cell volume with pressure has been determined from the structural refinements of X-ray diffraction patterns that are used to extract the axial compressibilities and bulk modulus by means of Birch&ndash
Giant conductivity enhancement: Pressure-induced semiconductor-metal phase transition in Cd0.90Zn0.1Te
2019
Element doping and pressure compression may change material properties for improved performance in applications. We report pressure-induced metallization in the semiconductor $\mathrm{C}{\mathrm{d}}_{0.90}\mathrm{Z}{\mathrm{n}}_{0.1}\mathrm{Te}$. Transport measurements showed an overall resistivity drop of 11 orders of magnitude under compression up to 12 GPa, which is indicative of a metallization transition. X-ray diffraction measurements revealed that the sample underwent a structural transition from a cubic-$F4\overline{3}m$ phase (zinc blende) to a cubic-$Fm\overline{3}m$ phase (rock salt) at about 5.5 GPa, followed by another transition to an orthorhombic $Cmcm$ structure at 13 GPa. A…