Search results for "Thin films."
showing 10 items of 148 documents
Couches minces d'oxynitrure de titane : la réactivité comme moyen original de caractérisation physico - chimique
2002
Titanium oxinitride thin films, TiNxOy, were elaborated on Si(100) by the MOCVD (Metal Organic Chemical Vapor Deposition) method, using titanium isopropoxide Ti(OCH(CH3)2)4 and ammonia NH3 as precursors. By varying the growth temperature, it is possible to modify the N/O ratio and change the conductivity of the films.The target of this work was to determine the composition and the structure of these TiNxOy thin films in order to understand the electrical properties. However, this study was difficult because classical characterization techniques (SEM, XRD, Raman, XPS...) were unable to describe the whole TiNxOy system. Indeed, only a structure which is isomorphic to TiN (NaCl structure) was …
Atomic Layer Deposition of Intermetallic Fe4Zn9 Thin Films from Diethyl Zinc
2022
| openaire: EC/H2020/765378/EU//HYCOAT We present a new type of atomic layer deposition (ALD) process for intermetallic thin films, where diethyl zinc (DEZ) serves as a coreactant. In our proof-of-concept study, FeCl3 is used as the second precursor. The FeCl3 + DEZ process yields in situ crystalline Fe4Zn9 thin films, where the elemental purity and Fe/Zn ratio are confirmed by time-of-flight elastic recoil detection analysis (TOF-ERDA), Rutherford backscattering spectrometry (RBS), atomic absorption spectroscopy (AAS), and energy-dispersive X-ray spectroscopy (EDX) analyses. The film thickness is precisely controlled by the number of precursor supply cycles, as expected for an ALD process.…
Tribological properties of thin films made by atomic layer deposition sliding against silicon
2018
Interfacial phenomena, such as adhesion, friction, and wear, can dominate the performance and reliability of microelectromechanical (MEMS) devices. Here, thin films made by atomic layer deposition (ALD) were tested for their tribological properties. Tribological tests were carried out with silicon counterpart sliding against ALD thin films in order to simulate the contacts occurring in the MEMS devices. The counterpart was sliding in a linear reciprocating motion against the ALD films with the total sliding distances of 5 and 20 m. Al2O3 and TiO2 coatings with different deposition temperatures were investigated in addition to Al2O3-TiO2-nanolaminate, TiN, NbN, TiAlCN, a-C:H [diamondlike car…
Magnetization Dynamics in Proximity-Coupled Superconductor-Ferromagnet-Superconductor Multilayers
2020
In this work, magnetization dynamics is studied in superconductor/ferromagnet/superconductor three-layered films in a wide frequency, field, and temperature ranges using the broad-band ferromagnetic resonance measurement technique. It is shown that in presence of both superconducting layers and of superconducting proximity at both superconductor/ferromagnet interfaces a massive shift of the ferromagnetic resonance to higher frequencies emerges. The phenomenon is robust and essentially long-range: it has been observed for a set of samples with the thickness of ferromagnetic layer in the range from tens up to hundreds of nanometers. The resonance frequency shift is characterized by proximity-…
Exploring integration prospects of opal-based photonic crystals
2003
Different methods of functionalisation of thin opal films are discussed, including synthesis of opals on pre-patterned substrates, post-synthesis electron beam lithography, preparation of opals with heterogeneous photonic band gap structure and integrating opals with light sources. These approaches have been tested experimentally and key technological problems have been identified.
Synthesis, Optical, and Morphological Studies of ZnO Powders and Thin Films Fabricated by Wet Chemical Methods
2020
Zinc oxide nanoparticles were prepared from Zn5(CO3)2(OH)6 precursor, capped with poly(vinylpyrrolidone) (PVP), and annealed at 600 °
Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition.
2013
A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-thin ZnO films prepared by atomic layer deposition is reported. The structural transition from an amorphous to a polycrystalline state is observed upon increasing the thickness. The unusual behavior of the energy gap with thickness reflected by optical properties is attributed to the improvement of the crystalline structure resulting from a decreasing concentration of point defects at the growth of grains. The spectra of UV and visible photoluminescence emissions correspond to transitions near the band-edge and defect-related transitions. Additional emissions were observed from band-tail states near th…
Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon
2016
The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of coatings were not applicable to thin atomic layer deposition (ALD) films on silicon wafers. Thus, the bases for critical load evaluation were established and the critical loads suitable for ALD coating adhesion evaluation on silicon wafers were determined in this paper as LCSi1, LCSi2, LCALD1, and LCALD2, representing the failure points of the silicon substrate and the coating delamination points of the ALD coating. The adhesion performance of the ALD Al2O3, TiO2, TiN, and TaCN+Ru coatings with a thickness range between 20 and 600 nm and dep…
Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films
2019
Due to the safety challenges associated with the use of trimethylaluminum as a metal precursor for the deposition of alumina, different chemicals have been investigated over the years to replace it. The authors have investigated the use of aluminum tri-isopropoxide (TIPA) as an alternative alkoxide precursor for the safe and cost-effective deposition of alumina. In this work, TIPA is used as a stable Al source for atomic layer deposition (ALD) of Al2O3 when different oxidizing agents including water, oxygen plasma, water plasma, and ozone are employed. The authors have explored the deposition of Al2O3 using TIPA in ALD systems operating in vacuum and atmospheric pressure conditions. For the…
Rayleigh-instability-driven dewetting of thin Au and Ag films on indium-tin-oxide surface under nanosecond laser irradiations
2013
Investigations have been carried out on laser-beam-induced nanoparticle (NP) formation in thin (5 nm) Au and Ag films on indium-tin-oxide substrate. After the irradiation the films were observed to break-up into NPs through a dewetting mechanism. This mechanism was investigated as a Rayleigh-instability- driven process. In fact, for each used laser fluence, the resulting Au and Ag NPs' mean size and surface-to-surface mean distance were quantified and correlated between them in the framework of the Rayleigh-instability theory showing an excellent agreement. © The Institution of Engineering and Technology 2013.