Search results for "Toe"

showing 10 items of 3824 documents

Crystallization of silica opals onto patterned silicon wafer

2006

We report on fabrication of high quality opaline photonic crystals from large silica spheres, self-assembled in hydrophilic trenches of silicon wafers by using a drawing apparatus with a combination of stirring. The achievements here reported comprise a spatial selectivity of opal crystallization without special treatment of the wafer surface, a filling of the trenches up to the top, leading to a spatially uniform film thickness, particularly an absence of cracks within the size of the trenches, and finally a good three-dimensional order of the opal lattice even in trenches with a complex confined geometry, verified using optical measurements. The opal lattice was found to match the pattern…

Materials scienceFabricationSiliconbusiness.industrychemistry.chemical_elementColloidal crystallaw.inventionOpticschemistrylawOptoelectronicsWaferSPHERESSelf-assemblyCrystallizationbusinessPhotonic crystalSPIE Proceedings
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Flexible MgO-Based Magnetic Tunnel Junctions on Silicon Substrate

2018

Flexible electronic devices are emerging in many areas, providing novel features and creating new applications [1]. Due to their ubiquitous utilization, flexible magnetic sensors [2] play a critical part in this development. In particular, magnetic tunnel junctions (MTJs) are of great interest, because of advantages like low power consumption or high sensitivity. We report the development of flexible MTJs on a silicon substrate fabricated by a low-cost batch process [3]. Thereby, conventionally fabricated MTJ devices are transformed into flexible ones by thinning down the silicon wafer from 500 μm to 5 μm. This process leads to thin, bendable silicon devices, while maintaining their origina…

Materials scienceFabricationSiliconbusiness.industrychemistry.chemical_elementSubstrate (electronics)ElastomerSemiconductorStack (abstract data type)chemistryEtching (microfabrication)OptoelectronicsWaferbusiness2018 IEEE International Magnetics Conference (INTERMAG)
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Planar Technology for NDT-Ge X-Ray Microcalorimeters: Absorber Fabrication

2009

We have investigated the electroplating process to deposit thick uniform films of tin on a Ge wafer coated with Spin‐On Glass, in order to fabricate the absorbers for Ge microcalorimeter arrays. Here we discuss some technological details and propose two alternative metal bilayer to be used as seed for the electroplating.

Materials scienceFabricationX-ray detectors planar technologybusiness.industryBilayerAnalytical chemistrychemistry.chemical_elementSettore ING-INF/01 - ElettronicaIon implantationPlanarSettore FIS/05 - Astronomia E AstrofisicachemistryNondestructive testingOptoelectronicsWaferTinbusinessElectroplating
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Light-Induced Sublimation of Cadmium Sulphide

1984

It has recently been shown that single crystal CdS, illuminated by light whose photon energy exceeds the bandgap, can eject particles from its surface while the temperature is well below the value required for vacuum sublimation. This phenomenon has obvious applications to the fabrication of surface structures as well as to the production of thin films that can show good CdS stoichiometry. This work will present several data on the morphology of the etched surface and its dependance on crystal orientation; results of an analysis of the recondensed thin film phase from the ejected material will also be shown. Emphasis will be devoted to examples of high resolution surface structures fabricat…

Materials scienceFabricationbusiness.industryBand gapOptoelectronicsSublimation (phase transition)Thin filmPhoton energybusinessSingle crystalStoichiometryCadmium sulphide
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Technologies for the fabrication of cylindrical fine line devices

1997

Abstract A microlithographic process suited for metal patterning on cylindrical substrates has been developed. This includes all steps from metal coating to final etching, with resolution in the 5 μm range.

Materials scienceFabricationbusiness.industryMetal coatingFine lineCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsMicrolithography 3-D Litography MicrofabricationEtching (microfabrication)OptoelectronicsElectrical and Electronic Engineeringbusiness
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TiO2 in memristors and resistive random access memory devices

2021

Abstract One of the most recent applications of TiO2 thin films is as an oxide layer in memristors, electronic devices considered as one of the most promising nonvolatile memories and as possible building units for neuromorphic computing. This chapter aims to describe several fabrication ways, either (electro)chemical or physical methods, of TiO2 thin films and to highlight the relationship between method and layer properties. Some fundamentals on the mechanism of memristors’ operation, that is, resistive switching in oxide thin films, will be given, classifying the different types of devices based on the used electrode materials and underlying physicochemical processes. Finally, it will be…

Materials scienceFabricationbusiness.industryOxideMemristorResistive random-access memorylaw.inventionchemistry.chemical_compoundchemistryNeuromorphic engineeringlawOptoelectronicsElectronicsThin filmbusinessLayer (electronics)
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Thin Film Metal Oxides for Displays and Other Optoelectronic Applications

2020

Thin films of metal oxides have been extensively studied for various applications because of their durability, lower cost and lower toxicity, excellent chemical, magnetic, electrical and optical properties. A fusion of electrical and optical properties led to the growth of optoelectronic devices for a variety of applications including displays, light-emitting diodes, photovoltaic cells, photodetectors, optical storage, medicine, and so on. Optoelectronic devices have revolutionized our daily lives with their potentials in various aspects. An extensive research on materials for these devices has to be credited for the improvement in their performance over the years. Several metal oxide thin …

Materials scienceFabricationbusiness.industryOxideOptical storagelaw.inventionchemistry.chemical_compoundchemistryThin-film transistorFlexible displaylawOptoelectronicsThin filmbusinessDiodeLight-emitting diode
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Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates

2009

5 páginas, 5 figuras.

Materials scienceFabricationbusiness.industryQuantum dotsQuantum point contactGeneral EngineeringPhysics::OpticsGeneral Physics and AstronomyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectEpitaxySingle photon emissionCondensed Matter::Materials ScienceNanolithographyQuantum dotQuantum dot laserOptoelectronicsSingle photon emittersGeneral Materials SciencePatterned substratesbusinessQuantum
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All-organic electro-optic waveguide modulator comprising SU-8 and nonlinear optical polymer

2017

Institute of Solid State Physics, University of Latvia (SJZ/2016/26); Ministry of Education and Science, Republic of Latvia (MultIfunctional Materials and composItes, photonicS and nanotechnology (IMIS2)). We acknowledge Dr. Anatolijs Sarakovskis at Institute of Solid State Physics for the XPS measurements.

Materials scienceFabricationbusiness.industrySingle-mode optical fiberElectro-optic modulatorSecond-harmonic generation02 engineering and technology021001 nanoscience & nanotechnologyCladding (fiber optics)01 natural sciencesAtomic and Molecular Physics and Optics010309 opticsOpticsOptical modulatorModulation0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]Optoelectronics0210 nano-technologybusinessMaskless lithographyOptics Express
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Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors

2004

The fabrication of (Al,Ga)N-based metal–semiconductor–metal (MSM) photovoltaic detectors requires the growth of high-quality (Al,Ga)N films. Inserting a low-temperature deposited buffer layer enables the growth of an epitaxial layer with a reduced density of defects. Two structures using GaN and AlN buffer layers have been deposited by low-pressure metalorganic chemical vapor deposition and used to fabricate MSM interdigitated detectors. The devices have been characterized to investigate the effects of the buffer layers on the detector performances.

Materials scienceFabricationbusiness.industryWide-bandgap semiconductorPhotodetectorsGeneral Physics and AstronomyPhotodetectorultraviolet photodetectorsChemical vapor depositionGallium nitrideEpitaxymedicine.disease_causeSettore ING-INF/01 - ElettronicaBuffer (optical fiber)medicineOptoelectronicsbusinessLayer (electronics)Ultraviolet
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