Search results for "conductor"
showing 10 items of 1270 documents
ideal: an R/Bioconductor package for interactive differential expression analysis
2020
AbstractBackgroundRNA sequencing (RNA-seq) is an ever increasingly popular tool for transcriptome profiling. A key point to make the best use of the available data is to provide software tools that are easy to use but still provide flexibility and transparency in the adopted methods. Despite the availability of many packages focused on detecting differential expression, a method to streamline this type of bioinformatics analysis in a comprehensive, accessible, and reproducible way is lacking.ResultsWe developed the ideal software package, which serves as a web application for interactive and reproducible RNA-seq analysis, while producing a wealth of visualizations to facilitate data interpr…
<title>Holographic recording in amorphous semiconductor films</title>
1997
The present state of the real time holographic recording in amorphous semiconductor films is reviewed including mechanisms, parameters, properties and applications. Effects of the coherent, incoherent and relaxational self- enhancement as well as the influence of the film structure relaxation are considered. Quasi-permanent sub-band-gap light holographic recording is reported for the first time. 157
Structural, vibrational and electrical study of compressed BiTeBr
2016
Compresed BiTeBr has been studied from a joint experimental and theoretical perspective. Room-temperature x-ray diffraction, Raman scattering, and transport measurements at high pressures have been performed in this layered semiconductor and interpreted with the help of ab initio calculations. A reversible first-order phase transition has been observed above 6–7 GPa, but changes in structural, vibrational, and electrical properties have also been noted near 2 GPa. Structural and vibrational changes are likely due to the hardening of interlayer forces rather than to a second-order isostructural phase transition while electrical changes are mainly attributed to changes in the electron mobilit…
Effect of anion substitution on the structural and transport properties of argyrodites Cu7PSe6−xSx
2019
Inspired by the good performance of argyrodites as ion conducting thermoelectrics and as solid electrolytes we investigated the effect of isovalent S2- substitution for Se2- in Cu7PSe6. At room temperature Cu7PSe6 crystallizes in the primitive cubic β-polymorph of the argyrodite structure and transforms to the face-centered high-temperature (HT) γ-modification above 320 K. The transition for the homologous Cu7PS6 occurs at 510 K. Promising thermoelectric and ion conducting properties are observed only in the HT modification, where the cations are mobile. Using Rietveld refinements against X-ray diffraction data the effect of isovalent S2- substitution for Se2- on the structural and transpor…
Holographic recording optimization in amorphous As-Se-S films
2003
The holographic recording parameters of amorphous chalcogenide semiconductor (AChS) thin films under optimization depend on hologram type. So, using self-enhancement effect during recording and wet etching after recording enable possibility to decrease recording energy and increase of signal/noise ratio for embossed holograms. Choosing the appropriate light exposure permit us to achieve equal values of diffraction efficiency (DE) for different diffraction orders during fabrication of light splitting holographic optical elements (HOE). Changing film thickness and recording wavelength it is possible to find optimal conditions for high DE holographic gratings readable at infrared region of lig…
Density variations in liquid tellurium: Roles of rings, chains and cavities
2010
Liquid tellurium has been studied by density-functional/molecular-dynamics simulations at 560, 625, 722, and 970 K and by high-energy x-ray diffraction (HEXRD) at 763 K and 973 K. The HEXRD measurements agree very well with earlier neutron-scattering data of Menelle et al. The density maximum near the melting point (722 K) reflects the competition between twofold and threefold local coordination, which results in chain formation and changed ring statistics at lower $T$, and the variation with $T$ of the volume of cavities ($26--35\text{ }\mathrm{%}$ of the total). A higher-order gradient expansion of the exchange-correlation functional is needed to describe structural details. Changes in th…
Site-specific atomic order and band structure tailoring in the diluted magnetic semiconductor (In,Ga,Mn)As
2021
Physical review / B 103(7), 075107 (1-13) (2021). doi:10.1103/PhysRevB.103.075107
Facile fabrication of flower like self-assembled mesoporous hierarchical microarchitectures of In(OH)3 and In2O3: In(OH)3 micro flowers with electron…
2016
Abstract A template and capping-reagent free facile fabrication method for mesoporous hierarchical microarchitectures of flower-like In(OH) 3 particles under benign hydrothermal conditions is reported. Calcination of In(OH) 3 to In 2 O 3 with the retention of morphology is also described. Both In(OH) 3 and In 2 O 3 microstructures were analyzed with SEM, EDX, TEM and powder X-ray diffraction. The crystal sizes for In(OH) 3 and In 2 O 3 were calculated using the Scherrer equation. In In(OH) 3 the thin flakes at the periphery of micro flowers were electron beam sensitive. The mechanism of self-assembly process was analyzed as well.
Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices
2000
6 páginas, 6 figuras, 1 tabla.
Gas sensing properties of Zn-doped p-type nickel ferrite
2012
Abstract The influence of zinc ion to the NiFe2O4 p-type semiconductor gas response characteristics is demonstrated. For characterization of gas sensor material, synthesized by sol–gel auto combustion method, X-ray diffraction (XRD), scanning electron microscopy (SEM), DC resistance and impedance spectroscopy (IS) measurements were employed. The response change of Zn doped nickel ferrite is related to the interruption of hole hopping between nickel ions. This was improved by change of conductivity type with temperature and gas exposure.