Search results for "conductor"

showing 10 items of 1270 documents

Influence of LV neutral grounding on global earthing systems

2015

International Standards define a Global Earthing System as an earthing net created interconnecting local Earthing Systems (generally through the shield of MV cables and/or bare buried conductors). In Italy, the regulatory authority for electricity and gas requires distributors to guarantee the electrical continuity of LV neutral conductor. This requirement has led to the standard practice of realizing “reinforcement groundings” along the LV neutral conductor path and at users’ delivery cabinet. Moreover, in urban high-load scenarios (prime candidates to be part of a Global Earthing System), it is common that LV distribution scheme creates, through neutral conductors, an effective connection…

Engineeringelectrical and electronic engineeringmaxwell subareas method020209 energyEnergy Engineering and Power TechnologyGround and neutralindustrial and manufacturing engineering02 engineering and technologyRegulatory authorityGlobal earthing system (GES) global grounding system (GGS) ground potential LV neutral conductor maxwell subareas method.control and systems engineeringlv neutral conductorShield0202 electrical engineering electronic engineering information engineeringglobal earthing systemmaxwell sub-areas methodGlobal earthing system (GES)Electrical conductorglobal grounding system (GGS)Groundbusiness.industryGES; GGS; global earthing system; global grounding system; ground potential; lv neutral conductor; maxwell sub-areas method; control and systems engineering; industrial and manufacturing engineering; electrical and electronic engineeringElectrical engineeringGlobal Earting SystemGESglobal grounding systemground potentialEarthing systemGGSGlobal earthing system (GES); global grounding system (GGS); ground potential; LV neutral conductor; maxwell subareas method; Control and Systems Engineering; Industrial and Manufacturing Engineering; Electrical and Electronic EngineeringSettore ING-IND/33 - Sistemi Elettrici Per L'EnergiaSettore ING-IND/31 - ElettrotecnicaGlobal Earting System; GES; Global Grounding System; GGS; Ground potential; Maxwell Sub-areas Method; LV neutral conductorHigh loadElectricityGES; GGS; Global earting system; global grounding system; ground potential; lv neutral conductor; maxwell sub-areas method; electrical and electronic engineering; energy engineering and power technologybusiness
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Investigation of amorphous oxide film-electrolyte junctions by AC techniques

1992

Current AC (alternating current) techniques are used often to characterize the energetics at a semiconducting solid phase/electrolyte interface. For thin layers having a strongly disordered or amorphous structure (such as oxide-passive layers anodically grown on valve metals), interpretative models currently used for crystalline semiconductors may produce misleading data. A new interpretation of the admittance data, based on recent models for amorphous semiconductors (a-Sc) Schottky barriers, is presented for passive films of Nb, W and Ti. The physical bases of the model are presented as well as its advantages and disadvantages. The new theory views the solid/electrolyte interface more sati…

Environmental EngineeringThin layersbusiness.industryChemistryGeneral Chemical EngineeringSchottky barrierFermi levelInorganic chemistrySchottky diodeElectrolyteAmorphous solidsymbols.namesakeSemiconductorPhase (matter)symbolsOptoelectronicsbusinessBiotechnologyAIChE Journal
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Taking Advantage of Selective Change Driven Processing for 3D Scanning

2013

This article deals with the application of the principles of SCD (Selective Change Driven) vision to 3D laser scanning. Two experimental sets have been implemented: one with a classical CMOS (Complementary Metal-Oxide Semiconductor) sensor, and the other one with a recently developed CMOS SCD sensor for comparative purposes, both using the technique known as Active Triangulation. An SCD sensor only delivers the pixels that have changed most, ordered by the magnitude of their change since their last readout. The 3D scanning method is based on the systematic search through the entire image to detect pixels that exceed a certain threshold, showing the SCD approach to be ideal for this applicat…

Event-based visionLaser scanningComputer scienceTransducers3d scanninglcsh:Chemical technologySensitivity and SpecificityBiochemistryArticleAnalytical Chemistrylaw.inventionPhotometryPhotometry (optics)Imaging Three-DimensionallawInformàticaNyquist–Shannon sampling theoremComputer visionlcsh:TP1-11853D scanningElectrical and Electronic Engineeringhigh-speed visual acquisitionInstrumentationPixelbusiness.industryLasers3D reconstructionReproducibility of ResultsSignal Processing Computer-AssistedEquipment DesignImage EnhancementLaserAtomic and Molecular Physics and OpticsEquipment Failure AnalysisTransducerSemiconductorsCMOSArtificial intelligencebusinessHigh-speed visual acquisitionevent-based visionSensors
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Colloidal Nanoplatelet/Conducting Polymer Hybrids: Excitonic And Material Properties

2016

WOS:000370678700053 Here we present the first account of conductive polymer/colloidal nanoplatelet hybrids. For this, we developed DEH-PPV-based polymers with two different anchor groups (sulfide and amine) acting as surfactants for CdSe nanoplatelets, which are atomically flat semiconductor nanocrystals. Hybridization of the polymers with the nanoplatelets in the solution phase was observed to cause strong photoluminescence quenching in both materials. Through steady-state photoluminescence and excitation spectrum measurements, photoluminescence quenching was shown to result from dominant exciton dissociation through charge transfer at the polymer/nanoplatelet interfaces that possess a sta…

Excitation spectrumMaterials sciencePhotoluminescenceSulfideDEH-PPV-Based PolymersSulfideExcitonCdSe NanoplateletsNanotechnology02 engineering and technologySurface active agents010402 general chemistryOptoelectronic devices01 natural sciencesDissociation (chemistry)ColloidCharge transferQuenchingHybrid optoelectronic devicesPhysical and Theoretical ChemistryPhotoluminescenceSulfur compoundsAmineSemiconductor nanocrystalsConductive polymerchemistry.chemical_classificationExcited statesBuilding blockesPolymerInterface statesEmission quenching021001 nanoscience & nanotechnology0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsPolymer/Colloidal Nanoplatelet HybridsGeneral EnergyChemical engineeringchemistryExcited stateAnchorsExcitons0210 nano-technologyDissociationConductive polymerPhotoluminescence quenchingExciton dissociation
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The influence of Coulomb interaction screening on the excitons in disordered two-dimensional insulators.

2021

AbstractWe study the joint effect of disorder and Coulomb interaction screening on the exciton spectra in two-dimensional (2D) structures. These can be van der Waals structures or heterostructures of organic (polymeric) semiconductors as well as inorganic substances like transition metal dichalcogenides. We consider 2D screened hydrogenic problem with Rytova–Keldysh interaction by means of so-called fractional Scrödinger equation. Our main finding is that above synergy between screening and disorder either destroys the exciton (strong screening) or promote the creation of a bound state, leading to its collapse in the extreme case. Our second finding is energy levels crossing, i.e. the degen…

ExcitonScience02 engineering and technologyTwo-dimensional materials01 natural sciencesQuantum mechanicsArticlesymbols.namesakeCondensed Matter::Materials Science0103 physical sciencesBound stateCoulomb010306 general physicsQuantumPhysicsMultidisciplinaryCondensed matter physicsbusiness.industryQRHeterojunction021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectSemiconductorsymbolsMedicinevan der Waals force0210 nano-technologyDegeneracy (mathematics)businessTheoretical physicsScientific reports
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Topology driven g-factor tuning in type-II quantum dots

2017

We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type-II InAs/GaAsxSb1−x quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g factor, which are modulated by the applied bias. The results are explained in the frame of realistic →k⋅→p and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the InAs/GaAs realm.

ExcitonVoltage controlGeneral Physics and AstronomyFOS: Physical sciences02 engineering and technologyTopology01 natural sciencessymbols.namesakeCondensed Matter::Materials Science0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)010306 general physicsQuantumPhysicsCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed Matter::OtherCiència dels materials021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectDipoleSemiconductorsQuantum dotSISTEMAS HAMILTONIANOSsymbols0210 nano-technologyHamiltonian (quantum mechanics)
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An experimental study of dynamic behaviour of graphite polycarbonatediol polyurethane composites for protective coatings

2013

Segmented polycarbonatediol polyurethane (PUPH) has been synthesized and modified with different amounts of graphite conductive filler (from 0 to 50 wt%). Thermal and dynamical thermal analysis of the composites clearly indicates changes in the polyurethane relaxations upon addition of graphite. Broadband dielectric spectroscopy has been used to study the dielectric properties of the (PUPH) and one composite in the frequency range from 10−2 to 107 Hz and in the temperature window of −140 to 170 ◦C. Relaxation processes associated with different molecular motions and conductivity phenomena (Maxwell–Wagner–Sillars and electrode polarization) are discussed and related to the graphite content

Expanded graphitePolyurethaneMaterials scienceDielectricRelaxation (NMR)Composite numberGeneral Physics and AstronomySurfaces and InterfacesGeneral ChemistryDielectricConductivityCondensed Matter PhysicsSurfaces Coatings and Filmschemistry.chemical_compoundchemistryMAQUINAS Y MOTORES TERMICOSGraphiteComposite materialThermal analysisTERMODINAMICA APLICADA (UPV)Electrical conductorPolyurethaneComposites
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Lieb polariton topological insulators

2018

We predict that the interplay between the spin-orbit coupling, stemming from the TE-TM energy splitting, and the Zeeman effect in semiconductor microcavities supporting exci- ton-polariton quasi-particles results in the appearance of unidirectional linear topological edge states when the top microcavity mirror is patterned to form a truncated dislocated Lieb lattice of cylindrical pillars. Periodic nonlinear edge states are found to emerge from the linear ones. They are strongly localized across the interface and they are remarkably robust in comparison to their counterparts in hexagonal lattices. Such robustness makes possible the existence of nested unidirectional dark solitons that move …

FOS: Physical sciences02 engineering and technologyPattern Formation and Solitons (nlin.PS)01 natural sciencesSolitonssymbols.namesakeLattice (order)0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)Polariton:Física::Electromagnetisme [Àrees temàtiques de la UPC]010306 general physicsPhysicsCondensed Matter::Quantum GasesZeeman effectCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed matter physicsMagnetic energybusiness.industry021001 nanoscience & nanotechnologyNonlinear Sciences - Pattern Formation and SolitonsNonlinear systemSemiconductorTopological insulatorsymbolsQuasiparticle0210 nano-technologybusinessPhysics - OpticsOptics (physics.optics)
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Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

2011

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm 2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster. © 2011 Optical Society of America.

FabricationComputer sciencePacket networksPhosphinesIntegrationIndium phosphideIndiumSemiconductor laser theoryFootprint (electronics)chemistry.chemical_compoundDiscrete componentsSpectral amplitudeComputer Communication NetworksTEORIA DE LA SEÑAL Y COMUNICACIONESMonolithically integratedOptical labelsOptical amplifierSignal processingbusiness.industryExperimental characterizationInPOptical DevicesSignal Processing Computer-AssistedEquipment DesignChipIntegration schemeAtomic and Molecular Physics and OpticsOptical packet networksEquipment Failure Analysischemistryvisual_artElectronic componentvisual_art.visual_art_mediumIndium phosphideOptoelectronicsMonolithic integrated circuitsbusinessLabel swapping
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Electrical characterization of deoxyribonucleic acid hybridization in metal-oxide-semiconductor-like structures

2012

In this work, metal-oxide-semiconductor (MOS)-like sensors in which deoxyribonucleic acid (DNA) strands are covalently immobilized either on Si oxide or on a gold surface were electrically characterized. Si oxide fabrication process allowed us to have a surface insensitive to the solution pH. A significant shift in the flat band voltage was measured after single strand DNA immobilization (+0.47 +/- 0.04 V) and after the complementary strand binding (+0.07 +/- 0.02 V). The results show that DNA sensing can be performed using a MOS structure which can be easily integrated in a more complex design, thus avoiding the problems related to the integration of micro-electrochemical cells.

FabricationMaterials scienceComplementary strandPhysics and Astronomy (miscellaneous)OxideNanotechnologyElectrical characterizationSettore ING-INF/01 - ElettronicaComplex designSIO2 SURFACESMetalSi oxidechemistry.chemical_compoundCAPACITORSComplementary DNASolution pHFlat-band voltageMicro-electrochemical cellFIELD-EFFECT DEVICESMolecular biophysicsMetal oxide semiconductorDNAGold surfaceMOS structureIMMOBILIZATIONChemical engineeringchemistryFabrication proceCovalent bondvisual_artvisual_art.visual_art_mediumSingle strand DNABiosensorDNADNA sensing
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