Search results for "electronic device"

showing 10 items of 55 documents

Growth kinetics of colloidal Ge nanocrystals for light harvesters

2016

Colloidal Ge nanocrystals (NCs) are gaining increased interest because of their potential application in low-cost optoelectronic and light harvesting devices. However, reliable control of colloidal NC synthesis is often an issue and a deeper understanding of the key-role parameters governing NC growth is highly required. Here we report an extended investigation on the growth of colloidal Ge NCs synthesized from a one-pot solution based approach. A systematic study of the effects of synthesis time, temperature and precursor concentration is elucidated in detail. X-ray diffraction (XRD) analysis reveals the presence of crystalline Ge NCs with a mean size (from 5 to 35 nm) decreasing with the …

Materials scienceScanning electron microscopePHOTODETECTORSGeneral Chemical EngineeringPhotodetectorNanotechnology02 engineering and technologyActivation energy010402 general chemistry01 natural sciencesSettore ING-INF/01 - ElettronicaColloidDynamic light scatteringPEDOT:PSSGermanium; Quantum dot; PHOTODETECTORSchemistry.chemical_classificationGermaniumQuantum dotGeneral ChemistryPolymer021001 nanoscience & nanotechnology0104 chemical scienceschemistryChemical engineeringNanocrystaloptoelectronic devices colloidal nanocrystals0210 nano-technology
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Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memori…

2006

We study the role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage. In fact, the capture mechanism of the silicon adatoms in the proximity of existing dots restricts the number of possible nucleation sites, the final dot size, and the dot position, thus driving the process toward partial self-order. We numerically evaluate the relative dispersion of surface coverage for several gate areas and compare the results to the fully random case. The coverage dispersion is related to the fluctuations from bit to bit of the threshold voltage window (Δ Vth) distribution of nanocrystal memories. The evaluations, com…

Materials scienceSiliconQuantum dotsbusiness.industryNucleationGeneral Physics and Astronomychemistry.chemical_elementWindow (computing)NanotechnologyChemical vapor depositionCondensed Matter::Mesoscopic Systems and Quantum Hall EffectSettore ING-INF/01 - Elettronicanon volatile memoriesSettore FIS/03 - Fisica Della Materiachemical vapor depositionThreshold voltageDistribution (mathematics)chemistryNanocrystalnanoelectronic devicesscaling lawsDispersion (optics)OptoelectronicsbusinessJournal of Applied Physics
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Polymeric Thin Films for Organic Electronics: Properties and Adaptive Structures

2013

This review deals with the correlation between morphology, structure and performance of organic electronic devices including thin film transistors and solar cells. In particular, we report on solution processed devices going into the role of the 3D supramolecular organization in determining their electronic properties. A selection of case studies from recent literature are reviewed, relying on solution methods for organic thin-film deposition which allow fine control of the supramolecular aggregation of polymers confined at surfaces in nanoscopic layers. A special focus is given to issues exploiting morphological structures stemming from the intrinsic polymeric dynamic adaptation under non-…

Materials scienceSupramolecular chemistryNanotechnologyReviewlcsh:Technologysolution processeslaw.inventionelectronic devices solution processes polymers thin filmslawmorphologyGeneral Materials ScienceElectronicsThin filmlcsh:MicroscopyNanoscopic scaleplastic electronicslcsh:QC120-168.85chemistry.chemical_classificationOrganic electronicslcsh:QH201-278.5lcsh:TTransistorPolymerchemistrythin filmsThin-film transistorlcsh:TA1-2040solar cellslcsh:Descriptive and experimental mechanicstransistorslcsh:Electrical engineering. Electronics. Nuclear engineeringlcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971Materials
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Q -switched and modelocked all-fiber lasers based on advanced acousto-optic devices

2011

The interest in all-fiber lasers is stimulated by the inherent advantages they have over bulk lasers in aspects such as heat dissipation and robustness. The performance of Q-switched and modelocked fiber lasers can benefit enormously from the development of all-fiber configurations. A fiber laser with strictly all-fiber components can fulfil the requirements of mechanical stability, low maintenance, enhanced power efficiency, simplified assembly process, and low cost. In this framework, recent developments infiber acousto-optic devices are reviewed that have demonstrated new possibilities for actively Q-switched distributed feedback fiber lasers, modelocking lasers and doubly active Q-switc…

Materials sciencebusiness.industryThermal management of electronic devices and systemsCondensed Matter PhysicsLaserQ-switchingAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic Materialslaw.inventionAll fiberlawRobustness (computer science)Fiber laserOptoelectronicsA fibersbusinessElectrical efficiencyLaser & Photonics Reviews
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Individual arc-discharge synthesized multiwalled carbon nanotubes probed with multiple measurement techniques

2020

Arc-discharge synthesized multiwalled carbon nanotubes (AD-MWNT), or related MWNTs, exhibit a good quality compared to the more common type of MWNT synthesized by catalytic chemical vapor deposition methods. Yet experimental measurements on these are rather few and typically have not correlated data from different measurement techniques. Here, the authors report Raman spectroscopy, scanning probe microscopy, conductivity measurements, and force microscopy on single AD-MWNTs. The results demonstrate the high quality of AD-MWNTs and are compatible with the view of them as the best approximation of MWNTs as an assembly of defect-free concentric individual single-walled carbon nanotubes. The au…

Materials sciencescanning probe microscopyCarbon nanotubeConductivitylaw.inventionnanotubesElectric arcsymbols.namesakeScanning probe microscopyraman spectroscopyatomifysiikkalawelectric dischargesMicroscopyMaterials ChemistryElectrical and Electronic EngineeringatomivoimamikroskopiaInstrumentationatomic force microscopyPhysicsProcess Chemistry and TechnologyConductanceSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsChemical engineeringelectronic devicessymbolsscanning tunneling microscopynanoputketRaman spectroscopyEngineering sciences. TechnologyLayer (electronics)scanning electron microscopy
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ITO top-electrodes via industrial-scale PLD for efficient buffer-layer-free semitransparent perovskite solar cells

2022

The deposition of transparent conductive oxides (TCO) usually employs harsh conditions that are frequently harmful to soft/organic underlayers. Herein, successful use of an industrial pulsed laser deposition (PLD) tool to directly deposit indium tin oxide (ITO) films on semitransparent vacuum-deposited perovskite solar cells without damage to the device stack is demonstrated. The morphological, electronic, and optical properties of the PLD deposited ITO films are optimized. A direct relation between the PLD chamber pressure and the solar cell performance is obtained. The semitransparent perovskite solar cells prepared exclusively by vacuum-assisted techniques had fill factors of 78% and exc…

Mechanics of Materialsoptoelectronic devicesGeneral Materials Scienceperovskite solar cellspulsed laser depositionMaterialsindium tin oxideIndustrial and Manufacturing EngineeringCèl·lules fotoelèctriques
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Field-driven domain wall motion under a bias current in the creep andflow regimes in Pt/[CoSiB/Pt](N) nanowires

2016

AbstractThe dynamics of magnetic domain wall (DW) in perpendicular magnetic anisotropy Pt/[CoSiB/Pt]N nanowires was studied by measuring the DW velocity under a magnetic field (H) and an electric current (J) in two extreme regimes of DW creep and flow. Two important findings are addressed. One is that the field-driven DW velocity increases with increasing N in the flow regime, whereas the trend is inverted in the creep regime. The other is that the sign of spin current-induced effective field is gradually reversed with increasing N in both DW creep and flow regimes. To reveal the underlying mechanism of new findings, we performed further experiment and micromagnetic simulation, from which w…

MultidisciplinaryMaterials scienceMagnetic domainCondensed matter physicsSpintronicsMagnetic devices02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesArticleAmorphous solidMagnetic fieldDomain wall (magnetism)Creep0103 physical sciencesElectronic devicesElectric current010306 general physics0210 nano-technologyAnisotropySimulation
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Flat-top ultra-wideband photonic filters based on mutual coherence function synthesis

2008

A novel all-incoherent optical circuit that allows for band-pass microwave-photonic filter design is presented and verified through numerical simulation. In contrast to conventional spectrum-sliced optical architectures that operate on the basis of a finite number of discrete taps, our proposal is based on arbitrary shaping of the spectrum of the broadband optical source in a conventional frequency encoder. This fact dramatically increases the free spectral range of the filter with respect to the conventional discrete-time optical processing. The filter transfer function is given by the mutual coherence function of the filtered source which allows, through an inverse problem, sculpting the …

Mutual coherenceComputer sciencebusiness.industryResonanceUltra-widebandOptical signal processingOptoelectronic devicesTransfer functionAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsAdaptive filterFilter designOpticsCoherence theoryFilter (video)Dispersion (optics)BasebandElectrical and Electronic EngineeringPhysical and Theoretical ChemistryPhotonicsbusinessFree spectral rangeRoot-raised-cosine filterOptics Communications
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Wearable, Fiber-less, Multi-Channel System for Continuous Wave Functional Near Infrared Spectroscopy Based on Silicon Photomultipliers Detectors and …

2019

Development and in-vivo validation of a Continuous Wave (CW) functional Near Infrared Spectroscopy (fNIRS) system is presented. The system is wearable, fiber-less, multi-channel (16×16, 256 channels) and expandable and it relies on silicon photomultipliers (SiPMs) for light detection. SiPMs are inexpensive, low voltage and resilient semiconductor light detectors, whose performances are analogous to photomultiplier tubes (PMTs). The advantage of SiPMs with respect to PMTs is that they allow direct contact with the scalp and avoidance of optical fibers. In fact, the coupling of SiPMs and light emitting diodes (LEDs) allows the transfer of the analog signals to and from the scalp through thin …

PhotomultiplierSpectroscopy Near-InfraredOptical fiberMaterials scienceDynamic rangebusiness.industryDetectorBrainElectroencephalographySignal Processing Computer-Assisted01 natural scienceslaw.invention010309 opticsWearable Electronic Devices03 medical and health sciences0302 clinical medicineSilicon photomultiplierAnalog signallaw0103 physical sciencesOptoelectronicsPhotonicsbusinessOptical filter030217 neurology & neurosurgery2019 41st Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)
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Bi3+doping in 1D ((CH3)3SO)PbI3: A model for defect interactions in halide perovskites

2022

The recently described monodimensional hybrid pseudo-perovskite ((CH3)3SO)PbI3 exhibits complete Pb2+/Bi3+ miscibility in the B site. Heterovalent substitution imposes that charge-compensating defects are introduced in the lattice as well. This paper reports the energetics of point defects and the interaction between charge-compensating defects that occur upon Bi3+ doping in ((CH3)3SO)PbI3. Periodic DFT simulations were employed to analyze the formation energy of Pb2+ vacancies, (CH3)3SO+ vacancies, iodide vacancies, or the insertion of interstitial iodide ions. Solid solutions with a large Bi3+ content were modeled considering different charge compensation defects (Pb2+ vacancies, (CH3)3SO…

Point defectLead compoundAbsorption spectroscopySolid solutionSolubilitySettore CHIM/03 - Chimica Generale E InorganicaMaterials ChemistryGeneral ChemistryOptoelectronic deviceElectronic propertie
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