Search results for "etic"

showing 10 items of 53387 documents

Efficient generation of restricted growth words

2013

A length n restricted growth word is a word w=w"1w"2...w"n over the set of integers where w"1=0 and each w"i, i>1, lies between 0 and the value of a word statistics of the prefix w"1w"2...w"i"-"1 of w, plus one. Restricted growth words simultaneously generalize combinatorial objects as restricted growth functions, staircase words and ascent or binary sequences. Here we give a generic generating algorithm for restricted growth words. It produces a Gray code and runs in constant average time provided that the corresponding statistics has some local properties.

010102 general mathematicsBinary numberValue (computer science)0102 computer and information sciences[ MATH.MATH-CO ] Mathematics [math]/Combinatorics [math.CO]01 natural sciencesComputer Science ApplicationsTheoretical Computer SciencePrefixCombinatoricsGray code010201 computation theory & mathematics[MATH.MATH-CO]Mathematics [math]/Combinatorics [math.CO]Signal ProcessingPartial word0101 mathematicsConstant (mathematics)ComputingMilieux_MISCELLANEOUSWord (group theory)Information SystemsMathematicsInformation Processing Letters
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Restricted compositions and permutations: from old to new Gray codes

2011

Any Gray code for a set of combinatorial objects defines a total order relation on this set: x is less than y if and only if y occurs after x in the Gray code list. Let @? denote the order relation induced by the classical Gray code for the product set (the natural extension of the Binary Reflected Gray Code to k-ary tuples). The restriction of @? to the set of compositions and bounded compositions gives known Gray codes for those sets. Here we show that @? restricted to the set of bounded compositions of an interval yields still a Gray code. An n-composition of an interval is an n-tuple of integers whose sum lies between two integers; and the set of bounded n-compositions of an interval si…

0102 computer and information sciences02 engineering and technologyInterval (mathematics)[ MATH.MATH-CO ] Mathematics [math]/Combinatorics [math.CO]01 natural sciencesTheoretical Computer ScienceCombinatoricsGray codePermutationsymbols.namesakeInteger020204 information systems[MATH.MATH-CO]Mathematics [math]/Combinatorics [math.CO]0202 electrical engineering electronic engineering information engineeringComputingMilieux_MISCELLANEOUSMathematicsDiscrete mathematicsExtension (predicate logic)Composition (combinatorics)Cartesian productComputer Science Applications010201 computation theory & mathematicsComputer Science::Computer Vision and Pattern RecognitionBounded functionSignal ProcessingsymbolsInformation Systems
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Statistics-preserving bijections between classical and cyclic permutations

2012

Recently, Elizalde (2011) [2] has presented a bijection between the set C"n"+"1 of cyclic permutations on {1,2,...,n+1} and the set of permutations on {1,2,...,n} that preserves the descent set of the first n entries and the set of weak excedances. In this paper, we construct a bijection from C"n"+"1 to S"n that preserves the weak excedance set and that transfers quasi-fixed points into fixed points and left-to-right maxima into themselves. This induces a bijection from the set D"n of derangements to the set C"n"+"1^q of cycles without quasi-fixed points that preserves the weak excedance set. Moreover, we exhibit a kind of discrete continuity between C"n"+"1 and S"n that preserves at each s…

0102 computer and information sciencesFixed point[ MATH.MATH-CO ] Mathematics [math]/Combinatorics [math.CO]01 natural sciencesCombinatorial problemsTheoretical Computer ScienceCyclic permutationSet (abstract data type)CombinatoricsBijections[MATH.MATH-CO]Mathematics [math]/Combinatorics [math.CO]0101 mathematicsComputingMilieux_MISCELLANEOUSMathematicsDescent (mathematics)Discrete mathematicsStatistics on permutationsMathematics::Combinatorics010102 general mathematicsDescentComputer Science ApplicationsDerangement010201 computation theory & mathematicsExcedenceSignal ProcessingBijectionBijection injection and surjectionMaximaInformation Systems
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Angular dependence of the domain wall depinning field in the sensors with segmented corners

2017

Rotating domain wall based sensors that have recently been developed are based on a segmented looping geometry. In order to determine the crucial pinning of domain walls in this special geometry, we investigate the depinning under different angles of an applied magnetic field and obtain the angular dependence of the depinning field of the domain walls. Due to the geometry, the depinning field not only exhibits a 180$^\circ$-periodicity but a more complex dependence on the angle. The depinning field depends on two different angles associated with the initial state and the segmented geometry of the corner. We find that depending on the angle of the applied field two different switching proces…

010302 applied physics0301 basic medicineCondensed Matter - Materials ScienceHistoryMaterials scienceField (physics)Condensed matter physicsMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences01 natural sciencesComputer Science ApplicationsEducationMagnetic field03 medical and health sciences030104 developmental biologyDomain wall (magnetism)0103 physical sciencesAngular dependence
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Controlled turbulence regime of electron cyclotron resonance ion source for improved multicharged ion performance

2020

Fundamental studies of excitation and non-linear evolution of kinetic instabilities of strongly nonequlibrium hot plasmas confined in open magnetic traps suggest new opportunities for fine-tuning of conventional electron cyclotron resonance (ECR) ion sources. These devices are widely used for the production of particle beams of high charge state ions. Operating the ion source in controlled turbulence regime allows increasing the absorbed power density and therefore the volumetric plasma energy content in the dense part of the discharge surrounded by the ECR surface, which leads to enhanced beam currents of high charge state ions. We report experiments at the ECR ion source at the JYFL accel…

010302 applied physicsAccelerator Physics (physics.acc-ph)Materials scienceAcoustics and UltrasonicsIon beamFOS: Physical sciencesPlasmaCondensed Matter PhysicsKinetic energy7. Clean energy01 natural sciencesElectron cyclotron resonanceIon sourcePhysics - Plasma Physics010305 fluids & plasmasSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsIonPlasma Physics (physics.plasm-ph)Physics::Plasma Physics0103 physical sciencesPhysics - Accelerator PhysicsAtomic physicsExcitationBeam (structure)
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Effect of space charge on the negative oxygen flux during reactive sputtering

2017

Negative ions often play a distinctive role in the phase formation during reactive sputter deposition. The path of these high energetic ions is often assumed to be straight. In this paper, it is shown that in the context of reactive magnetron sputtering space charge effects are decisive for the energetic negative ion trajectories. To investigate the effect of space charge spreading, reactive magnetron sputter experiments were performed in compound mode with target materials that are expected to have a high secondary ion emission yield (MgO and CeO2). By the combination of energy flux measurements, and simulations, a quantitative value for the negative oxygen ion yield can be derived.

010302 applied physicsAcoustics and UltrasonicsChemistryEnergy fluxContext (language use)02 engineering and technologySputter deposition021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesSpace chargeMolecular physicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsIonCondensed Matter::Materials SciencePhysics::Plasma PhysicsSputteringYield (chemistry)0103 physical sciencesOxygen fluxAtomic physics0210 nano-technologyJournal of Physics D: Applied Physics
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Determination of an empirical law of aluminium and magnesium alloys absorption coefficient during Nd :YAG laser interaction

2007

International audience; Welding laser modelling requires knowledge about relative changes of many thermo-physical parameters involved in the interaction. The absorptivity of the material is one of the most important. In this study, experimental measurements of absorptivity with an integrating sphere on two alloys (aluminium and magnesium) were made. These results were compared with an analytical calculation that takes into account the trapping of the beam by multiple reflections inside the keyhole. Based on a statistical method, an empirical law is proposed connecting absorptivity with the peak power of the laser and the duration of interaction. During the interaction, two distinct phenomen…

010302 applied physicsAcoustics and UltrasonicsChemistry[ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]chemistry.chemical_element02 engineering and technologyWeldingMolar absorptivity021001 nanoscience & nanotechnologyCondensed Matter PhysicsLaser01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionIntegrating spherelawAluminiumAttenuation coefficientNd:YAG laser0103 physical sciences[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]0210 nano-technologyBeam (structure)
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Migration kinetics of ion-implanted beryllium in glassy carbon

2008

Abstract Migration kinetics of low-concentration implanted 7 Be in glassy carbon has been studied by the modified radiotracer technique at temperatures 1285 °C and 1340 °C. The annealed sample concentration profiles show two distinctive components: (i) Main profile broadening assigned to beryllium trapping in defects during annealing. (ii) Tail parts on both sides of the profile maximum related to faster migration. Of the latter the profile representing bulk diffusion lies on the region free of defect influence and is well described by concentration-independent diffusivity. The features of the concentration profile broadening towards the sample surface indicate partial Be trapping in defect…

010302 applied physicsAnnealing (metallurgy)Mechanical EngineeringAnalytical chemistrychemistry.chemical_elementDiamond02 engineering and technologyGeneral ChemistryTrappingengineering.materialGlassy carbon021001 nanoscience & nanotechnologyThermal diffusivity01 natural sciencesElectronic Optical and Magnetic MaterialsIonchemistryImpurity0103 physical sciencesMaterials ChemistryengineeringElectrical and Electronic EngineeringBeryllium0210 nano-technologyDiamond and Related Materials
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Optimum Design and Performance of an Electron Gun for a Ka-Band TWT

2019

This paper deals with optimum design and development of a thermionic electron gun to meet specified beam requirements within defined electric and geometric constraints for a Ka -band traveling wave tube (TWT) for space applications. The electron gun design is based on the Pierce method and carried out according to the iterative process indicated by Vaughan. The design of a periodic permanent magnet (PPM) beam focusing system for the stability of the beam is also required. A sensitivity analysis, by varying electric parameters and geometric parameters, is presented and taken into account as a fundamental role to the aim of optimizing the design of the Pierce gun. A cathode current value of 5…

010302 applied physicsBeam diameterMaterials sciencebusiness.industryTraveling-wave tubeSettore ING-INF/01 - Elettronica01 natural sciencesCathodeElectronic Optical and Magnetic Materialslaw.inventionSettore ING-IND/31 - ElettrotecnicaOpticslawcontrol grid electron gun PPM focusing system sensitivity analysis shadow grid TWTMagnet0103 physical sciencesKa bandElectrical and Electronic EngineeringbusinessBeam (structure)VoltageElectron gunIEEE Transactions on Electron Devices
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Photoluminescence-Based Spatially Resolved Temperature Coefficient Maps of Silicon Wafers and Solar Cells

2020

In this article, we present a method to obtain implied open-circuit voltage images of silicon wafers and cells at different temperatures. The proposed method is then demonstrated by investigating the temperature coefficients of various regions across multicrystalline silicon wafers and cells from different heights of two bricks with different dislocation densities. Interestingly, both low and high temperature coefficients are found in dislocated regions on the wafers. A large spread of temperature coefficient is observed at regions with similar performance at 298 K. Reduced temperature sensitivity is found to be correlated with the increasing brick height and is exhibited by both wafers and…

010302 applied physicsBrickPhotoluminescenceMaterials sciencebusiness.industry02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsReduced properties0103 physical sciencesOptoelectronicsDegradation (geology)WaferElectrical and Electronic EngineeringDislocation0210 nano-technologybusinessTemperature coefficientImage resolutionIEEE Journal of Photovoltaics
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