Search results for "film."
showing 10 items of 4451 documents
Characterization of Thin Passive Film-Electrolyte Junctions. The Amorphous Semiconductor (a-SC) Schottky Barrier Approach.
2017
A detailed study of the electronic properties of thin (< 20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and in particular the density of electronic state (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behaviour of a-SC Schottky barrier. It is shown the importance of the DOS distribution in determini…
A procedure to calculate the I–V characteristics of thin-film photovoltaic modules using an explicit rational form
2015
Abstract Accurate models of the electrical behaviour of photovoltaic modules are effective tools for system design. One or two diode equivalent circuits have been widely used even though some mathematical difficulties were found dealing with implicit equations. In this paper, a new model based on a simple rational function, which does not contain any implicit exponential form, is presented. The model was conceived in order to be used with thin-film photovoltaic modules, whose current–voltage curves are characterised by very smooth shapes. The parameters of the model are evaluated by means of the derivatives of the issued characteristics in the short circuit and open circuit points at standa…
Plasmonic and diffractive nanostructures for light trapping—an experimental comparison
2015
Metal nanoparticles and diffractive nanostructures are widely studied for enhancing light trapping efficiency in thin-film solar cells. Both have achieved high performance enhancements, but there are very few direct comparisons between the two. Also, it is difficult to accurately determine the parasitic absorption of metal nanoparticles. Here, we assess the light trapping efficiencies of both approaches in an identical absorber configuration. We use a 240 nm thick amorphous silicon slab as the absorber layer and either a quasi-random supercell diffractive nanostructure or a layer of self-assembled metal nanoparticles for light trapping. Both the plasmonic and diffractive structures strongly…
An accurate one-diode model suited to represent the current-voltage characteristics of crystalline and thin-film photovoltaic modules
2020
Abstract In this paper a new one-diode model, conceived in order to be used to represent the current-voltage curves of both crystalline and thin-film photovoltaic modules, is presented. The model parameters are calculated from the information contained in the datasheets issued by manufactures by means of simple iterative procedures that do not require the assumption of simplifying hypotheses. Some innovative relations describing the dependence of the parameters from the solar irradiance and cell temperature are adopted in order to permit the model to reliably simulate the electrical behaviour of photovoltaic devices operating in real conditions. The ability of the model to calculate the cur…
Crystallization kinetics of amorphous SiC films: Influence of substrate
2005
Abstract The crystallization kinetics of amorphous silicon carbide films was studied by means of X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films were deposited by radio frequency (r.f.) magnetron sputtering on glassy carbon and single crystalline silicon substrates, respectively. TEM micrographs and XRD patterns show the formation of nano-crystalline β-SiC with crystallite sizes in the order of 50 nm during annealing at temperatures between 1200 and 1600 °C. A modified Johnson–Mehl–Avrami–Kolmogorov (JMAK) formalism was used to describe the isothermal transformation of amorphous SiC into β-SiC as an interface controlled, three-dimensional growth processes fr…
Processing of amorphous Si by pulsed laser irradiation at different wavelengths
2012
Amorphous Si thin films deposited on thermally oxidized Si wafers have been processed by the 2 nd and 3 rd harmonics of Nd:YAG laser. Surface modification of amorphous silicon layers have been investigated by scanning electron microscopy before and after chemical etching of processed silicon films. The super-lateral crystal growth regime was achieved with laser fluence of 280 mJ/cm 2 for the 2 nd harmonics and 155 mJ/cm 2 for the 3 rd harmonics. The grain size in polycrystalline Si samples prepared by successive crystallization in the lateral growth regime is about 0.5 - 1 μm.
Plasmonic modes in molybdenum ultra-thin films suitable for hydrogenated amorphous silicon thin film solar cells
2014
We have recently demonstrated that molybdenum ultra-thin films interposed between hydrogenated amorphous silicon (a-Si:H) and SnO2:F transparent conductive oxide (TCO) in thin film solar cells show light trapping effects which enhance the solar cells performances. The effect of this improvement may be attributed to surface plasmon polariton (SPP) modes excited at the molybdenum interface by the solar radiation. In this paper we show direct evidence of such SPP modes in the case of the molybdenum/air interface by using the attenuated total reflection (ATR) technique, pioneered by Kretschmann, and we evaluate the dielectric constant of molybdenum at 660 nm. (C) 2013 The Authors. Published by …
Influence of the electro-optical properties of an a-Si:H single layer on the performances of a pin solar cell
2012
We analyze the results of an extensive characterization study involving electrical and optical measurements carried out on hydrogenated amorphous silicon (α-Si:H) thin film materials fabricated under a wide range of deposition conditions. By adjusting the synthesis parameters, we evidenced how conductivity, activation energy, electrical transport and optical absorption of an α-Si:H layer can be modified and optimized. We analyzed the activation energy and the pre-exponential factor of the dark conductivity by varying the dopant-to-silane gas flow ratio. Optical measurements allowed to extract the absorption spectra and the optical bandgap. Additionally, we report on the temperature dependen…
Optical and amplified spontaneous emission of neat films containing 2-cyanoacetic derivatives
2018
During the last two decades, small organic molecules have been widely studied for potential applications in organic solid-state lasers due to low-cost production, simple processing possibility and physical property tuning ability through chemical structure synthetic modifications. One of the most investigated and applied compound in dye lasers is 4- (dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM). It has shown remarkable properties as a dye in solid-state lasers. One of the drawbacks of this compound is high intermolecular interactions which reduce emission efficiency. Therefore it can be applied only in doped systems in low concentration (around 2 wt%). Recently we hav…
Amplified Spontaneous Emission Properties of Solution Processed CsPbBr3 Perovskite Thin Films
2017
Metal halide perovskites are currently emerging as highly promising optoelectronic materials. It has been recently demonstrated that fully inorganic solution processed CsPbBr3 perovskite thin films show good electroluminescence properties combined with high thermal stability. In this work, we investigate in details the amplified spontaneous emission (ASE) properties of CsPbBr3 perovskite thin films, as a function of the temperature and the trap density, modified by changing the CsBr-PbBr2 precursor concentration. ASE is observed in samples from both CsBr-rich solution (low trap density) and equimolar solution (higher trap density), up to about 150 K, with a minimum threshold of 26 and 29 mu…