Search results for "thin film"
showing 10 items of 1200 documents
Conductimetry and impedance spectroscopy study of low pressure metal organic chemical vapor deposition TiN O films as a function of the growth temper…
2001
Abstract Titanium oxinitride thin films have been grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) using titanium isopropoxide, Ti(OCH(CH 3 ) 2 ) 4 (TIP) and NH 3 precursors in a growth temperature range from 450 to 750°C on sapphire substrates. The electrical behaviour of these films was studied between 400 and 173 K, revealing three different behaviours, ranking from a hopping conductivity (450–500°C) to a conducting one (700–750°C), with a dual behaviour for the intermediate growth temperatures. Moreover, at room temperature, both conductimetry and impedance spectroscopy highlighted a percolation behaviour, interpreted in terms of continuum percolation. The effect…
Thin film growth and band lineup of In2O3 on the layered semiconductor InSe
1999
Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignmen…
Resonant Raman characterisation of ultra-thin nano-protective carbon layers for magnetic storage devices
2003
Abstract Carbon thin films are very important as protective coatings for a wide range of applications such as magnetic storage devices. The key parameter of interest is the sp3 fraction, since it controls the mechanical properties of the film. Visible Raman spectroscopy is a very popular technique to determine the carbon bonding. However, the visible Raman spectra mainly depend on the configuration and clustering of the sp2 sites. This can result in the Raman spectra of different samples looking similar albeit having a different structure. Thus, visible Raman alone cannot be used to derive the sp3 content. Here we monitor the carbon bonding by using a combined study of Raman spectra taken a…
Spin-polarized scanning tunneling microscopy and spectroscopy of ultrathinFe∕Mo(110)films usingW∕Au∕Cotips
2006
We report on magnetic contrast observed in low-temperature spin-polarized scanning tunneling microscopy (SP-STM) of Fe nanowires deposited on Mo(110) using tungsten tips covered by $\mathrm{Au}∕\mathrm{Co}$ thin films. Due to the spin reorientation transition of Co films on Au an out-of-plane magnetic sensitivity is obtained for tips with thin cobalt films (up to 8 monolayers of Co), while for thicker Co coverages an in-plane magnetization component can be probed. Using $\mathrm{W}∕\mathrm{Au}∕\mathrm{Co}$ tips with out-of-plane magnetic sensitivity we show that the one (ML) and two (DL) atomic layers thick Fe nanowires prepared using step flow growth on a Mo(110) crystal are perpendicularl…
Investigations of the corrosion protection of ultrathin a-C and a-C:N overcoats for magnetic storage devices
2004
Abstract The thickness-dependent corrosion protection of carbon overcoats for magnetic hard disks can be analyzed by collecting X-ray absorption near edge structure (XANES) spectra at the Co L3-edge. Co is the main constituent of the protected magnetic media underneath. The spectra of the Co absorption edge display a strong peak for pure metallic, non-oxidized Co. This peak splits up into several sub-structures for oxidized Co. Therefore, XANES spectra provide a straightforward method to determine the overcoat thickness, leading to closed coverage and corrosion protection of the underlying material. A similar approach was carried out by X-ray photoelectron spectroscopy (XPS). Standard a-C:N…
Structural, electrical and optical properties of zinc‐iridium oxide thin films deposited by DC reactive magnetron sputtering
2014
ZnO-IrO2 thin films were deposited on glass by DC reactive magnetron sputtering at room tem-perature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentra-tion in the films. XRD data shows that ZnO-IrO2 thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO2, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10-3 Ωcm and 33% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.
Raman, electron microscopy and electrical transport studies of x-ray amorphous Zn-Ir-O thin films deposited by reactive DC magnetron sputtering
2015
Zn-Ir-O thin films on glass and Ti substrates were deposited by reactive DC magnetron sputtering at room temperature. Structural and electrical properties were investigated as a function of iridium concentration in the films. Raman spectrum of Zn-Ir-O (61.5 at.% Ir) resembles the spectrum of rutile IrO2, without any distinct features of wurtzite ZnO structure. SEM images indicated that morphology of the films surface improves with the iridium content. EDX spectroscopy and cross-section SEM images revealed that the films growing process is homogeneous. Crystallites with approximately 2-5 nm size were discovered in the TEM images. Thermally activated conductivity related to the variable range…
Temperature and substrate influence on the structure of TiN O thin films grown by low pressure metal organic chemical vapour deposition
2000
Abstract This paper presents the growth and characterization of titanium oxinitride (TiN x O y ) films grown by low pressure metal organic chemical vapour deposition (LP-MOCVD). The film nitrogen content, obtained by Rutherford backscattering spectroscopy (RBS), increases as the growth temperature increases (from 23 at.% at 450°C to 46 at.% at 750°C). Below 550°C, the films do not show any X-ray diffraction pattern. Above 550°C, the deposited films present the (111) and (200) TiN textures. Films deposited on (100) Si exhibit a 2 θ shift to higher Bragg angles, depending on the N/O ratio. These shifts are explained by using a substitutional oxygen model. Moreover, the atomic structure of suc…
Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films
2020
Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.
Processing and properties of nanocrystalline Pb(Sc0.5Ta0.5)O3, Pb(Sc0.5Nb0.5)O3, Pb(Mg1/3Nb2/3)O3and Pb0.76Ca0.24TiO3films and ferroelectric/ relaxor…
2001
Abstract Thin films of relaxor materials, namely Pb(Sc0.5Ta0.5)O3 (PST), Pb(Sc0.5Nb0.5)O3 (PSN) and Pb(Mg1/3Nb2/3)O3 (PMN), and of Pb0.76Ca0.24TiO3 (PTC), which is a classical ferroelectric as bulk material, have been produced to examine whether nanocrystalline relaxor materials show influences in their properties if their grain size is reduced to dimensions known from their nanodomains and to investigate effects in a superlattice of nanocrystalline ferroelectric and relaxor films. At first amorphous films of the different materials were deposited onto a Ti/Pt coated Silicon (100) wafer by reactive rf-sputtering. Different grain sizes could be prepared by a controlled annealing process. The…