Search results for "thin film"
showing 10 items of 1200 documents
Finite range scattering of Ni and Zn impurities in Y-123 thin films
1997
Abstract We investigated YBa 2 (Cu 1− z M z ) 3 O 7-δ (M Ni,Zn) thin films and determined the decrease of T c and the increase of residual resistivity due to Cu-site substitution, taking into account the CuO-chain contributions to the total conductivity. Although Zn suppresses T c stronger than Ni by a factor of 2.3 the increase of resistivity differs only slightly. Furthermore the observed resistivities are too high to be explained within scattering from point-like defects. To reconcile these contradictions, we assumed finite size scattering potentials, which lead to scattering phase shifts δ l of higher angular momebtum l > 0. T c -suppression is discussed qalitatively within this picture.
Phase separation of binary mixtures in thin films: Effects of an initial concentration gradient across the film.
2012
We study the kinetics of phase separation of a binary (A,B) mixture confined in a thin film of thickness $D$ by numerical simulations of the corresponding Cahn-Hilliard-Cook (CHC) model. The initial state consisted of 50$%$ A:50$%$ B with a concentration gradient across the film, i.e., the average order parameter profile is ${\ensuremath{\Psi}}_{\mathrm{av}}(z,t=0)=(2z/D\ensuremath{-}1){\ensuremath{\Psi}}_{g},\phantom{\rule{0.28em}{0ex}}0\ensuremath{\leqslant}z\ensuremath{\leqslant}D$, for various choices of ${\ensuremath{\Psi}}_{g}$ and $D$. The equilibrium state (for time $t\ensuremath{\rightarrow}\ensuremath{\infty}$) consists of coexisting A-rich and B-rich domains separated by interfac…
Electrical switching of perpendicular magnetization in a single ferromagnetic layer
2020
We report on the efficient spin-orbit torque (SOT) switching in a single ferromagnetic layer induced by a new type of inversion asymmetry, the composition gradient. The SOT of 6- to 60-nm epitaxial FePt thin films with a $L{1}_{0}$ phase is investigated. The magnetization of the FePt single layer can be reversibly switched by applying electrical current with a moderate current density. Different from previously reported SOTs which either decreases with or does not change with the film thickness, the SOT in FePt increases with the film thickness. We found the SOT in FePt can be attributed to the composition gradient along the film normal direction. A linear correlation between the SOT and th…
Thin epitaxial films of the Heusler compound
2005
Abstract We prepared thin films of the Heusler compound Co 2 Cr 0.6 Fe 0.4 Al with the B2 structure on a-plane (1 1 2 ¯ 0) Al 2 O 3 by sputtering. Films grown at high temperatures ( T ⩾ 600 ∘ C ) on Al 2 O 3 are fully epitaxial with the (1 1 0) and (1 1 ¯ 0) planes of the film parallel to the (1 1 2 ¯ 0) and (0 0 0 1) planes of the substrate, respectively. These epitaxial films possess a higher surface roughness than films grown at room temperature. The films show nearly rectangular hysteresis loops with coercive fields of the order of 10 mT. Magnetooptical Kerr measurements show an in-plane anisotropy of the magnetization with the easy axis in { 0 0 1 } direction. Hall measurements s…
Properties of Thin Ferroelectric Film with Different Electrodes
2008
The influence of different metallic and semiconducting electrodes on the properties of thin ferroelectric films is considered within the framework of the phenomenological Ginzburg-Landau theory. Allowing for the effect of charge screening in metals and semiconductors, the contribution of electric field produced by charges in the electrodes is included into the functional of free energy and, hence, to the Euler-Lagrange equation for film polarization. Application of variational method to this equation solution permitted the transformation of the free energy functional into a conventional type free energy with a renormalized coefficient before P 2 , the coefficient being dependent on the both…
Thermal conductivity of thermoelectric Al-substituted ZnO thin films
2013
ZnO:Al thin films with a low electrical resistivity were grown by magnetron sputtering on sapphire substrates. The cross-plane thermal conductivity (κ = 4.5 ± 1.3 W/mK) at room temperature is almost one order of magnitude lower than for bulk materials. The thermoelectric figure of merit ZT at elevated temperatures was estimated from in-plane power factor and the cross-plane thermal conductivity at room temperature. It is expected that the thermal conductivity drops with increasing temperature and is lower in-plane than cross-plane. Consequently, the thin film ZT is at least three times higher than for bulk samples at intermediate temperatures. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinh…
Induced roughness in thin films of smectic-C* elastomers
2002
The surface topography of a thin homeotropically oriented film of ferroelectric smectic-C* elastomer is studied by atomic force microscopy. We find that when the film is mechanically stretched, its surface becomes increasingly rough, in proportion to the applied strain. The effect depends strongly on the nature of crosslinks forming the elastomer network. The r.m.s. roughness correlations show a consistent trend [h(x) − h(0)]21/2 ~ (x/ξ)0.5. We introduce a theoretical model assuming that random disorder in the smectic tilt angle is induced by deformations via the coupling of mesogens to the elastic network. The model describes the observed power law and gives a prediction for the correlatio…
<title>Changes in the temperature dependence of the dielectric constant in irradiated antiferroelectric thin films</title>
2003
A model describing the changes of the Curie-Weiss temperature in lead-zirconate thin films under neutron irradiation is proposed. The Curie-Weiss temperature in the irradiated material decreases which is connected to charges caused by neutron irradiation. The charges located near the surfaces due to Schottky effect and in the bulk of the film results in different rates of the Curie-Weiss temperature decreases with neutron fluence. However the influence of the Schottky layers seems to be more pronounced. Satisfactory agreement between the theoretical results and the experimental data is obtained for different neutron fluences.© (2003) COPYRIGHT SPIE--The International Society for Optical Eng…
Dynamic response of thin-film semiconductors to AC voltage perturbations
2012
A theoretical treatment of a Schottky barrier dynamic response is developed on the basis of a general model of a semiconductor with thickness comparable in length to the space charge region width. It is shown that, when the space charge region approaches the metal/semiconductor interface, the electric field at this interface, induced by the charge accumulated on the metal, becomes significant with respect to the electric field induced by the charge accumulated on the semiconductor. Under this condition, the total capacitance of the Schottky barrier becomes independent of the polarization potential and tends to the value ε/L, like in a pure dielectric insulator. The term thin film is intende…
PEDOT thin films with n-type thermopower
2019
peer-reviewed Synthesis of n-type organic semiconductors is challenging as reduced states are difficult to obtain due to their instability in air. Here, we report tailoring of semiconducting behavior through control of surfactant concentration during synthesis of poly(3,4-ethylenedioxythiophene) (PEDOT) nanoparticles. Nanoparticles were synthesized by mini-emulsion polymerization, where stable suspensions were used to produce polymer films by a simple casting technique on polyethylene terephthalate (PET) substrates. Electrical conductivity and Seebeck coefficients were measured as a function of surfactant concentration. It was found that conductivity decreases three orders of magnitude as s…