showing 2 related works from this author
F centre production in CsI and CsI–Tl crystals under Kr ion irradiation at 15 K
2000
Abstract We present results of simultaneous in situ luminescence and optical absorption studies in scintillator CsI and CsI–Tl crystals, exposed to very dense electronic excitations induced by 86Kr ions (8.63 MeV/amu). Irradiation at 15 K leads to the formation of the prominent F absorption band. In addition, several other features of the broad absorption between exciton and F bands were ascribed to an anion vacancy, α centre (240 nm), self-trapped hole, Vk centre (410 nm) and interstitials, H centres (560 nm). We have found that low doping of thallium (∼1017 cm−3) causes the F centre formation to proceed more rapidly than in pure crystal. On the other hand, we were not able to create any a…
Low temperature X-ray luminescence of KNbO3 crystals
2000
We have studied X-ray luminescence of KNbO3 single crystal. The 575 nm luminescence band has been studied in the temperature range of 15‐45 K. The quenching parameters were found to be Qa 12 3 meV and ma 4 10 11 s ˇ1 .N o luminescence has been observed under heavy ion excitation ( 86 Kr ions, 8.63 MeV/amu) even at 15 K. ” 2000 Elsevier