0000000000085049
AUTHOR
Nirut Pussadee
Fast and blister-free irradiation conditions for cross-linking of PMMA induced by 2MeV protons
For soft lithography, the conventional negative tone resists, such as SU-8, that are used to create the mold have a number of drawbacks. PMMA, which is normally used as a positive tone resist, can be used as a negative resist by using high-fluence irradiation conditions. In this report, we outline optimization of the irradiation conditions for PMMA thin films using 2MeV H^+ ions to exploit their ability to work as a negative tone resist at ion fluences above 1.0x10^1^5ionscm^-^2. The main aim was to induce cross-linking while maintaining the exposed regions free of blisters and maintaining short irradiation times. We found that by using a two-step process with a low-flux irradiation, follow…
Development of economic MeV-ion microbeam technology at Chiang Mai University
Abstract Developing high technologies but in economic manners is necessary and also feasible for developing countries. At Chiang Mai University, Thailand, we have developed MeV-ion microbeam technology based on a 1.7-MV Tandetron tandem accelerator with our limited resources in a cost-effective manner. Instead of using expensive and technically complex electrostatic or magnetic quadrupole focusing lens systems, we have developed cheap MeV-ion microbeams using programmed L-shaped blade aperture and capillary techniques for MeV ion beam lithography or writing and mapping. The programmed L-shaped blade micro-aperture system consists of a pair of L-shaped movable aperture pieces which are contr…