0000000000092361

AUTHOR

C. Wenger

showing 3 related works from this author

Hf02 based RRAM: from materials engineering to integrated modules

2015

10 mars 2015; International audience; no abstract

[SPI]Engineering Sciences [physics][SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic[SPI] Engineering Sciences [physics][SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics[ SPI.MAT ] Engineering Sciences [physics]/Materials[ SPI ] Engineering Sciences [physics][SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic[ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics[ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic[SPI.MAT] Engineering Sciences [physics]/Materials[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics[SPI.MAT]Engineering Sciences [physics]/Materials
researchProduct

Measurements of Collisional Line Widths in the Stimulated Raman Q-Branch of the v1 Band of Silane

1990

0377-0486; Self-broadened widths of 28SiH4 in the v1 Q-branch have been measured at room temperature (295 K) using high-resolution stimulated Raman spectroscopy. These collisional widths have been obtained by fitting a superposition of Voigt profiles to the experimental spectra in the pressure range 28-154 Torr. No evidence for line mixing within the tetrahedral components of a Q(J) line has been found. The line broadening coefficients for J up to 13 depend weakly on the rotational quantum number. The mean value is 103.7 x 10(-3) cm-1 atm-1.

TUNABLE DIODE-LASERINFRARED DOUBLE-RESONANCEENERGY-TRANSFERMETHANE 13CD4REGION
researchProduct

Enhancement of Sensitivity in High-Resolution Stimulated Raman-Spectroscopy of Gases - Application to the 2v2 (1285 cm-1) Band of CO2

1990

0377-0486

researchProduct