0000000000098194
AUTHOR
Marcello Mirabello
showing 3 related works from this author
Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests
2021
High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. The neutron test campaigns on the SiC power MOSFETs (manufactered by ST) were conducted on the same wafer lot devices by STMicroelectronics and Airbus, with different neutron tester systems. HTGB and HTRB tests, which characterise gate-oxide integrity and junction robustness, show no difference between the non irradiated devices and those which survived to the neutron irradiation tests, with neutron fluence…
Energy Recovery of Multiple Charge Sharing Events in Room Temperature Semiconductor Pixel Detectors
2021
Multiple coincidence events from charge-sharing and fluorescent cross-talk are typical drawbacks in room-temperature semiconductor pixel detectors. The mitigation of these distortions in the measured energy spectra, using charge-sharing discrimination (CSD) and charge-sharing addition (CSA) techniques, is always a trade-off between counting efficiency and energy resolution. The energy recovery of multiple coincidence events is still challenging due to the presence of charge losses after CSA. In this work, we will present original techniques able to correct charge losses after CSA even when multiple pixels are involved. Sub-millimeter cadmium–zinc–telluride (CdZnTe or CZT) pixel detectors we…