0000000000114987
AUTHOR
Ning Dai
Evolution of structural and electronic properties of TiSe2 under high pressure
A pressure-induced structural phase transition and its intimate link with the superconducting transition was studied for the first time in TiSe2 up to 40 GPa at room temperature using X-ray diffraction, transport measurement, and first-principles calculations. We demonstrate the occurrence of a first-order structural phase transition at 4 GPa from the standard trigonal structure (S.G.P3¯m1) to another trigonal structure (S-G-P3¯c1). Additionally, at 16 GPa, the P3¯c1 phase spontaneously transforms into a monoclinic C2/m phase, and above 24 GPa, the C2/m phase returns to the initial P3¯m1 phase. Electrical transport results show that metallization occurs above 6 GPa. The charge density wave …
Giant conductivity enhancement: Pressure-induced semiconductor-metal phase transition in Cd0.90Zn0.1Te
Element doping and pressure compression may change material properties for improved performance in applications. We report pressure-induced metallization in the semiconductor $\mathrm{C}{\mathrm{d}}_{0.90}\mathrm{Z}{\mathrm{n}}_{0.1}\mathrm{Te}$. Transport measurements showed an overall resistivity drop of 11 orders of magnitude under compression up to 12 GPa, which is indicative of a metallization transition. X-ray diffraction measurements revealed that the sample underwent a structural transition from a cubic-$F4\overline{3}m$ phase (zinc blende) to a cubic-$Fm\overline{3}m$ phase (rock salt) at about 5.5 GPa, followed by another transition to an orthorhombic $Cmcm$ structure at 13 GPa. A…