0000000000144414
AUTHOR
Ryan C. Hayward
Orthogonal Ambipolar Semiconductor Nanostructures for Complementary Logic Gates.
We report orthogonal ambipolar semiconductors that exhibit hole and electron transport in perpendicular directions based on aligned films of nanocrystalline "shish-kebabs" containing poly(3-hexylthiophene) (P3HT) and N,N'-di-n-octyl-3,4,9,10-perylenetetracarboxylic diimide (PDI) as p- and n-type components, respectively. Polarized optical microscopy, scanning electron microscopy, and X-ray diffraction measurements reveal a high degree of in-plane alignment. Relying on the orientation of interdigitated electrodes to enable efficient charge transport from either the respective p- or n-channel materials, we demonstrate semiconductor films with high anisotropy in the sign of charge carriers. Fi…
Using Janus Nanoparticles To Trap Polymer Blend Morphologies during Solvent-Evaporation-Induced Demixing
Using ternary blends of polystyrene (PS), poly(methyl methacrylate) (PMMA), and Janus particles (JPs) with symmetric PS and PMMA hemispheres, we demonstrate the stabilization of dispersed and bicontinuous phase-separated morphologies by the interfacial adsorption of Janus particles during demixing upon solvent removal. The resulting blend morphology could be varied by changing the blend composition and JP loading. Increasing particle loading decreased the size of phase-separated domains, while altering the mixing ratio of the PS/PMMA homopolymers produced morphologies ranging from PMMA droplets in a PS matrix to PS droplets in a PMMA matrix. Notably, bicontinuous morphologies were obtained …