0000000000144417
AUTHOR
Jens C. Markwart
Orthogonal Ambipolar Semiconductor Nanostructures for Complementary Logic Gates.
We report orthogonal ambipolar semiconductors that exhibit hole and electron transport in perpendicular directions based on aligned films of nanocrystalline "shish-kebabs" containing poly(3-hexylthiophene) (P3HT) and N,N'-di-n-octyl-3,4,9,10-perylenetetracarboxylic diimide (PDI) as p- and n-type components, respectively. Polarized optical microscopy, scanning electron microscopy, and X-ray diffraction measurements reveal a high degree of in-plane alignment. Relying on the orientation of interdigitated electrodes to enable efficient charge transport from either the respective p- or n-channel materials, we demonstrate semiconductor films with high anisotropy in the sign of charge carriers. Fi…
Sulfur’s role in the flame retardancy of thio-ether–linked hyperbranched polyphosphoesters in epoxy resins
Abstract Hyperbranched polyphosphoesters are promising multifunctional flame retardants for epoxy resins. These polymers were prepared via thiol-ene polyaddition reactions. While key chemical transformations and modes of actions were elucidated, the role of sulfur in the chemical composition remains an open question. In this study, the FR-performance of a series of phosphorus-based flame retardant additives with and without sulfur (thio-ethers or sulfones) in their structure are compared. The successful synthesis of thio-ether or sulfone-containing variants is described and verified by 1H and 31P NMR, also FTIR and MALDI-TOF. A decomposition process is proposed from pyrolytic evolved gas an…