Couches minces d'oxynitrure de titane : la réactivité comme moyen original de caractérisation physico - chimique

2002

Titanium oxinitride thin films, TiNxOy, were elaborated on Si(100) by the MOCVD (Metal Organic Chemical Vapor Deposition) method, using titanium isopropoxide Ti(OCH(CH3)2)4 and ammonia NH3 as precursors. By varying the growth temperature, it is possible to modify the N/O ratio and change the conductivity of the films.The target of this work was to determine the composition and the structure of these TiNxOy thin films in order to understand the electrical properties. However, this study was difficult because classical characterization techniques (SEM, XRD, Raman, XPS...) were unable to describe the whole TiNxOy system. Indeed, only a structure which is isomorphic to TiN (NaCl structure) was …