0000000000175105
AUTHOR
Luisa González Sotos
Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers
Multilayer structure containing vertically stacked InAs/InP self-assembled quantum wires have been successfully grown by molecular-beam epitaxy. The influence of the InP spacer layer thickness on the structural and optical properties of the wire superlattice has been studied by means of transmission electron microscopy and photoluminescence. The coherent propagation of the strain field in the sample with a 5-nm-thick spacer determines by a size filtering effect a good homogeneity and uniformity of the wire stacks, and hence a good optical quality. The exciton recombination dynamics in the wire superlattice cannot be related to thermal escape of carriers out to the barriers, as occurs in sin…
Exciton recombination dynamics in InAs∕InP self-assembled quantum wires
In this work we investigate the exciton recombination dynamics in InAs∕InP semiconductor self-assembled quantum wires, by means of continuous wave and time resolved photoluminescence. The continuous wave photoluminescence results seem to indicate that the temperature quenching of the emission band seems to be more probably due to unipolar thermal escape of electrons towards the InP barrier. On the other hand, the analysis of time resolved photoluminescence reveals that the temperature dependence of the radiative and nonradiative recombination times is mainly determined by the dynamics of excitons localized by disorder (high energy tail of the PL band) and strongly localized (low energy tail…