Impact of nitrogen doping on the band structure and the charge carrier scattering in monolayer graphene

The addition of nitrogen as a dopant in monolayer graphene is a flexible approach to tune the electronic properties of graphene as required for applications. Here, we investigate the impact of the doping process that adds N dopants and defects on the key electronic properties, such as the mobility, the effective mass, the Berry phase, and the scattering times of the charge carriers. Measurements at low temperatures and magnetic fields up to 9 T show a decrease of the mobility with increasing defect density due to elastic, short-range scattering. At low magnetic fields weak localization indicates an inelastic contribution depending on both defects and dopants. Analysis of the effective mass …