0000000000194553
AUTHOR
Yanwen Zhang
Synthesis and characterization of cobalt silicide films on silicon
Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 d…
Formation of cobalt silicide from filter metal vacuum arc deposited films
The thermal reaction of Co film deposited on Si(111) surfaces by a high current filter metal vacuum arc (FMEVAD) system has been studied. After deposition the films were annealed over the 400-900 degrees C temperature range for 30 min. Rutherford backscattering spectrometry (RBS) was used to characterize the elemental depth distributions in the films subjected to different annealing temperatures. Ordered chemical phases were determined by glancing-incidence X-ray diffraction (GIXRD) and the morphology was determined by cross section transmission electron microscopy (TEM). The results show that the phases formed are Co2Si at 400 degrees C, CoSi + Coo at 500 degrees C, CoSi + CoSi2 at 600 deg…
Formation of cobalt silicide films by ion beam deposition
Abstract Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si(1 1 1) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700 °C for 30 min. The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700 °C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.
Modification of Materials by MeV Ion Beams
Today's fast developing technological based society places ever accelerating demands for new materials and materials processing methods. Leading edge fields as diverse as biomedical tissue engineering, quantum device, optical and magnetic information storage technology as well as immobilization of actinides, all require nanoscale engineering through controlled materials modification. The evolution of these advances from the research science stage to the industrial applications is a particular challenging task. Amongst the beam processing methods for materials modification MeV ions occupy a unique place. They interact strongly with both the atomic and electronic structures of the target mate…
Basics of Ion Scattering in Nanoscale Materials
Energetic ions interact with materials by collisions with the nuclei and electrons of the atoms that make up the material. In these collisions, energy and momentum is transferred from the projectile particle, which is a moving atom or ion, to the target particles (atomic nucleus or electron). Each collision leads to a slowing down of the moving projectile and also a deflection of the trajectory that gives rise to the term scattering, which is often used synonymously to describe the energy transfer process.