0000000000206020
AUTHOR
F. Meier Aeschbacher
Technical design of the phase I Mu3e experiment
Nuclear instruments & methods in physics research / A 1014, 165679 (2021). doi:10.1016/j.nima.2021.165679
Ultra-low material pixel layers for the Mu3e experiment
The upcoming Mu3e experiment will search for the charged lepton flavour violating decay of a muon at rest into three electrons. The maximal energy of the electrons is 53 MeV, hence a low material budget is a key performance requirement for the tracking detector. In this paper we summarize our approach to meet the requirement of about 0.1 % of a radiation length per pixel detector layer. This includes the choice of thinned active monolithic pixel sensors in HV-CMOS technology, ultra-thin flexible printed circuits, and helium gas cooling.
MuPix8 — Large area monolithic HVCMOS pixel detector for the Mu3e experiment
Abstract The requirements of the ultra thin pixel detectors for the Mu3e experiment at PSI can be achieved by the HVCMOS technology, which allows the design of fast monolithic detectors. The latest nearly full size prototype, MuPix8, has a size of about 1 × 2 cm 2 . The pixel readout circuitry was fully redesigned in comparison to the previous MuPix versions. MuPix8’s readout electronics implement a new concept with two comparators and two different operation modes. One mode uses two threshold voltages for time walk correction, the other is a ramp-ADC. First tests show a detection efficiency of 99.6% for 4 GeV electrons.
MuPix7 - A fast monolithic HV-CMOS pixel chip for Mu3e
The MuPix7 chip is a monolithic HV-CMOS pixel chip, thinned down to 50 \mu m. It provides continuous self-triggered, non-shuttered readout at rates up to 30 Mhits/chip of 3x3 mm^2 active area and a pixel size of 103x80 \mu m^2. The hit efficiency depends on the chosen working point. Settings with a power consumption of 300 mW/cm^2 allow for a hit efficiency >99.5%. A time resolution of 14.2 ns (Gaussian sigma) is achieved. Latest results from 2016 test beam campaigns are shown.