0000000000215219

AUTHOR

Arnaud Cathelat

showing 2 related works from this author

Surface plasmon near-field imaging of very thin microstructured polymer layers.

2004

We report on the near-field imaging of microstructured polymer layers deposited on an homogeneous metal thin film on which a surface plasmon mode is excited. The microstructures in the polymer layers are designed by electron beam lithography, and the near-field imaging is performed with a photon scanning tunneling microscope (PSTM). We show that, despite their very small height, the microstructures can be conveniently imaged with a PSTM thanks to the field enhancement at the surface of the metal thin film supporting the surface plasmon. The influence of the illumination conditions on the contrast of the PSTM images is discussed. In particular, we show that both the field enhancement and the…

chemistry.chemical_classificationPhotonMaterials sciencebusiness.industrySurface plasmonSurfaces and InterfacesPolymerCondensed Matter PhysicsMicrostructureSurface plasmon polaritonlaw.inventionOpticschemistrylawElectrochemistryGeneral Materials ScienceScanning tunneling microscopebusinessSpectroscopyElectron-beam lithographyLocalized surface plasmonLangmuir : the ACS journal of surfaces and colloids
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Changes in surface stress, morphology and chemical composition of silica and silicon nitride surfaces during the etching by gaseous HF acid

2007

Abstract HF acid attack of SiO2 and Si3N4 substrates is analyzed to improve the sensitivity of a sensor based on microcantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO2 and Si3N4 surface. Those differences influence the kinetic evolution of the plastic bending deflection of the cantilever coated with SiO2 and Si3N4 layer, respectively. The linear dependence between the HF concentration and the Si3N4 cantilever bending corresponds to a deep attack of the layer whereas the non-linear behavior observed for SiO2 layer can be explained by a combination of deep and lateral etching. The ca…

SiliconChemistrySurface stressAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsSurfaces Coatings and Filmschemistry.chemical_compoundSilicon nitrideX-ray photoelectron spectroscopyEtching (microfabrication)Plastic bendingReactive-ion etchingComposite materialLayer (electronics)Applied Surface Science
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