Photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity

1997

Abstract We report new results on the diffraction properties of photoinduced gratings in InGaAs/InGaAsP MQW structures. The original feature of this device is that the QWs are enclosed in an asymmetric Fabry–Perot microcavity in order to increase the diffraction efficiency. We observe oscillations in the diffraction efficiency due to resonant effects in the microcavity. The experimental spectra are compared with theory. Diffraction efficiency at 1.55 μm attains a maximum value of 2.7% at a write beam fluence of 260 μ J cm −2 , and then decreases at higher fluences. We explain this phenomenon by an absorption saturation at high excitation.