0000000000289730
AUTHOR
Mikko Kivekäs
Photo-enhanced O−, H− and Br− ion production in caesium sputter negative ion source : no evidence for resonant ion pair production
It has been proposed that the negative ion yield of a caesium sputter ion source could be enhanced by promoting neutral caesium atoms to electronically excited 7p states supporting resonant ion pair production. We have tested this hypothesis by illuminating the cathode of a caesium sputter ion source with an adjustable wavelength laser and measuring its effect on the extracted beam currents of O−, H− and Br− anions. The laser exposure causes the beam currents to increase but the effect is independent of the wavelength in the range of 440-460 nm, which leads us to conclude that there is no evidence for resonant ion pair production. The photon-induced beam current enhancement scales with the …
Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors
SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with…