0000000000292510
AUTHOR
D. Pilloud
Study of the structural changes induced by air oxidation in Ti–Si–N hard coatings.
International audience; 3-μm thick Ti–Si–N coatings were deposited on polished X38CrMoV5 substrates by sputtering a composite Ti–Si target in Ar–N2 reactive mixture. Oxidation tests were performed in air at 700 °C during 2 h. Whatever the silicon content in the range 0–4 at.%, no silicon containing compound was detected by XRD before air oxidation and only the TiN phase was evidenced. The mean grain size estimated from the full width at half maximum of the TiN (111) diffraction peak was close to 10 nm. As commonly reported for Ti–Si–N films, the hardness showed a maximum at 51 GPa versus the Si content. After oxidation of the TiN film, XRD and micro-Raman analyses revealed the occurrence of…
Stabilisation of tetragonal zirconia in oxidised ZrSiN nanocomposite coatings
Abstract ZrSiN coatings were deposited on steel and silicon substrates by reactive sputtering of a composite ZrSi target. The coatings were oxidised in air in the 600–750 °C temperature range. As-deposited and oxidised films were characterised by X-ray diffraction, micro-Raman spectroscopy, X-ray photoemission spectroscopy and glow discharge optical emission spectroscopy. The oxidation behaviour of ZrSiN coatings was compared to that of ZrN ones. It was demonstrated that addition of silicon in the 3–5 at.% range into ZrN-based coatings promotes the onset of oxidation by nearly 100 °C. The structure of the oxide layer was strongly dependent on the film’s silicon content: monoclinic zirc…
Effect of germanium addition on the properties of reactively sputtered ZrN films
For the first time, Zr-Ge-N films were deposited on silicon and steel substrates by sputtering a Zr-Ge composite target in reactive Ar-N2 mixture. The films were characterised by electron probe microanalysis, X-ray diffraction, micro-Raman spectroscopy and depth-sensing indentation. The effects of the Ge content and substrate bias voltage on the films' structure, internal stress, hardness and oxidation resistance were investigated. Substrate bias strongly influenced the chemical composition of the films being observed by means of a steep decrease in the Ge content for negative bias voltages higher than -80 V. In these cases, a significant hardness improvement was registered. For -100 V bias…