Radiation resistance of nanolayered silicon nitride capacitors
Abstract Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation…
Electronic functionality of Gd-bisphthalocyanine: Charge carrier concentration, charge mobility, and influence of local magnetic field
Abstract Gadolinium bisphthalocyanine (GdPc2) has been placed among the highest ranked molecular materials considered namely for modern optoelectronic applications including organic solar cells. To improve understanding of the correlation between GdPc2 magnetic properties and its electronic functionality, we experimentally and theoretically studied charge carrier concentration, charge mobility, and influence of local magnetic field on charge carrier transport. For better clearance, all the main studied properties of GdPc2 bisphthalocyanine were compared with Zn phthalocyanine (ZnPc) as a reference material. Conductivity and charge carrier mobility were measured in materials incorporated in …