0000000000352570
AUTHOR
J.a. Rocca
Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb70Te30 doped with Sn
Abstract Antimony-telluride based phase-change materials doped with Sn have been proposed to be ideal materials for improving the performance of phase-change memories. It is well known that Sb70Te30 thin films show a sharp fall in the electrical resistance in a narrow temperature range when heating. Therefore, it is interesting to study the effect of adding Sn into this composition. In this work, undoped and Sn-doped Sb–Te thin films of composition Snx[Sb0.70Te0.30]100-x, with x = 0.0, 2.5, 5.0 and 7.5 at. %, have been obtained by pulsed laser deposition. Their electrical resistance has been measured while heating from room temperature to 650 K. A sharp fall in the electrical resistance, as…
Structural and Mössbauer study of (Sb0.70Te0.30)100-x Snx alloys with x = 0, 2.5, 5.0 and 7.5
(Sb 0.70 Te 0.30 ) 100-x Sn x alloys (with x = 0, 2.5, 5.0 and 7.5 at. %)have been synthesized and characterized in order to determine the crystalline structure and properties of materials obtained upon solidification and to extract information about the location of the Sn atom in the Sb-Te matrix. Powder X-ray diffraction (XRD)has been used to determine the crystalline structure, whereas Mössbauer spectroscopy has been utilized to determine the localization and the local structure of the Sn atom in the Sb-Te matrix through the hyperfine interactions of the 119 Sn probe with its environment. We found that Sb 70 Te 30 crystallizes in a trigonal structure belonging to P-3m1 space group, while…