0000000000353352
AUTHOR
J. C. Martinez
Alternative Buffer-Layers for the Growth of SrBi2Ta2O9 on Silicon
In this work we investigate the influence of the use of YSZ and CeO2/YSZ as insulators for Metal- Ferroelectric-Insulator-Semiconductor (MFIS) structures made with SrBi2Ta2O9 (SBT). We show that by using YSZ only the a-axis oriented Pyrochlore phase could be obtained. On the other hand the use of a CeO2/YSZ double-buffer layer gave a c-axis oriented SBT with no amorphous SiO2 inter- diffusion layer. The characteristics of MFIS diodes were greatly improved by the use of the double buffer. Using the same deposition conditions the memory window could be increased from 0.3 V to 0.9 V. From the piezoelectric response, nano-meter scale ferroelectric domains could be clearly identified in SBT thin…
c-Axis tunneling in YBa2Cu3O7-\delta/PrBa2Cu3O7-\delta superlattices
In this work we report c-axis conductance measurements done on a superlattice based on a stack of 2 layers YBa2Cu3O{7-\delta} and 7 layers PrBa2Cu3O{7-\delta} (2:7). We find that these quasi-2D structures show no clear superconducting coupling along the c-axis. Instead, we observe tunneling with a gap of \Delta_c=5.0\pm 0.5 meV for the direction perpendicular to the superconducting planes. The conductance spectrum show well defined quasi-periodic structures which are attributed to the superlattice structure. From this data we deduce a low temperature c-axis coherence length of \xi_c=0.24\pm 0.03 nm.