Growth of polyaniline films on porous silicon layers

Abstract The electrochemical deposition of electrically active polyaniline films (PANI) onto the surface of porous silicon (PS) layers formed at p- and n-type silicon wafers has been studied using cyclic voltammetry measurements and infrared spectroscopy. The process of PANI deposition is easier on the PS layers formed at n-Si wafers and essentially retarded at PS/p-Si samples, presumably due to a parallel reaction of oxygen evolution. The polymerization reaction starts at the pore bottoms and propagates towards the external surface of the PS layer. Electric conduction of PS/PANI composites is lower than of uncovered PS layers.