0000000000380952

AUTHOR

James H. Edgar

0000-0003-0918-5964

showing 3 related works from this author

Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals

2003

ABSTRACTRaman scattering and photoluminescence (PL) spectroscopy with sub-bandgap excitation has been applied to explore tracing of common impurities (in particular of oxygen) in AlN. Bulk AlN crystals grown by the high temperature sublimation method were studied. PL bands have been observed at around 375 nm and at 560–660 nm and have been attributed to oxygen and to nitrogen vacancy/aluminium excess defects, respectively. The 375 nm UV PL band was found to shift with oxygen concentration. Micro-Raman spectra of the bulk AlN samples were measured in different polarisations. Besides normal Raman modes of AlN the presence of additional vibrational modes was detected. The modes were discussed …

PhotoluminescenceMaterials scienceSiliconAnalytical chemistrychemistry.chemical_elementsymbols.namesakechemistryVacancy defectMolecular vibrationsymbolsSublimation (phase transition)SpectroscopyRaman spectroscopyRaman scattering
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Phonons of hexagonal BN under pressure: Effects of isotopic composition

2021

Raman scattering experiments on isotopically enriched hexagonal boron nitride have been performed under pressure up to 11 GPa at room temperature. The sublinear increase of the Raman-active E2g mode frequencies has been characterized. The pressure behavior has been analyzed by means of a bond-stiffness–bond-length scaling parameter γ which takes into consideration the vast differences in a- and c-axis compressibilities. The interlayer shear mode exhibits a γ parameter similar to that of graphite, and the mode frequency in isotopically pure samples separates faster at low pressures as a result of van der Waals interactions. Because of the extremely low a-axis compressibility, the intralayer …

Materials scienceSublinear functionPhonon02 engineering and technology01 natural sciencessymbols.namesakeRaman scattering experimentsCondensed Matter::Superconductivity0103 physical sciencesPhonomsGraphite010306 general physicsScalingCondensed matter physicsPhysical Systems021001 nanoscience & nanotechnologyTechniquesSemiconductorsRaman spectroscopyCompressibilitysymbolsvan der Waals forceGraphene0210 nano-technologyRaman spectroscopyRaman scattering
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Pressure dependence of the interlayer and intralayer E2g Raman-active modes of hexagonal BN up to the wurtzite phase transition

2020

We present a Raman-scattering study of the interlayer and intralayer ${E}_{2g}$ Raman-active modes of hexagonal boron nitride $(h\ensuremath{-}\mathrm{BN})$ under hydrostatic pressure for pressures up to the transition to the wurtzite phase (10.5 GPa). Pressure coefficients and Gr\"uneisen parameters are determined for both modes, and are compared to ab initio calculations based on density functional perturbation theory. The pressure coefficient of the low-energy interlayer mode is higher than that of the high-energy intralayer mode owing to the large compressibility of the $h\ensuremath{-}\mathrm{BN}$ crystal along the $c$ direction. Both modes exhibit a sublinear phonon frequency increase…

Phase transitionMaterials scienceCondensed matter physicsEquation of state (cosmology)PhononHydrostatic pressure02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesPressure coefficientCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistryBoron nitrideCondensed Matter::Superconductivity0103 physical sciences010306 general physics0210 nano-technologyAmbient pressureWurtzite crystal structurePhysical Review B
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