0000000000395250

AUTHOR

E.g. Gryaznov

showing 1 related works from this author

Field- and irradiation-induced phenomena in memristive nanomaterials

2016

The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nano-materials represented, in a particular case, by a simple 'metal-insulator-metal' (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching - RS) originated from the formation and …

Resistive touchscreenSettore FIS/02 - Fisica Teorica Modelli E Metodi MatematiciOxideIonic bondingNanotechnology02 engineering and technologyMemristorSputter deposition021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciences010305 fluids & plasmasNanomaterialslaw.inventionIonchemistry.chemical_compoundchemistrylaw0103 physical sciences0210 nano-technologyMemristor resistive switching metal-oxide-metal nanostructure kinetic Monte-Carlo simulation radiation tolerance synaptic behaviour nonlinear dynamics stochastic resonanceElectrical conductor
researchProduct