0000000000413958

AUTHOR

J. Almeida-garcı́a

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Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

1999

Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…

PhotoluminescenceMaterials scienceIII-V semiconductorsSiliconExcitonBinding energyGeneral Physics and Astronomychemistry.chemical_elementBinding energyEpitaxyMolecular physicssymbols.namesakePhonon spectraLiquid phase epitaxial growth:FÍSICA [UNESCO]PhotoluminescenceAluminium compoundsX-ray absorption spectroscopyGallium arsenide Semiconductor growthImpurity statesDopingUNESCO::FÍSICASemiconductor epitaxial layersCrystallographychemistrysymbolsPhotoluminescence ; Binding energy ; Raman spectra ; III-V semiconductors ; Aluminium compounds ; Gallium arsenide Semiconductor growth ; Liquid phase epitaxial growth ; Semiconductor epitaxial layers ; Impurity states ; Excitons ; Phonon spectraExcitonsRaman spectraRaman spectroscopy
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