0000000000428894

AUTHOR

Ph. Roussignol

showing 4 related works from this author

Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots

2002

6 páginas, 3 figuras.

PhotoluminescencePhononLight scatteringsymbols.namesakechemistry.chemical_compoundCondensed Matter::Materials ScienceGallium arsenideMaterials ChemistryPhotoluminescenceIndium arsenideCondensed matter physicsCondensed Matter::OtherLight scatteringHeterojunctionSurfaces and InterfacesQuantum effectsCondensed Matter PhysicsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectSurfaces Coatings and FilmschemistryQuantum dotsymbolsIndium arsenideMolecular beam epitaxyRaman scatteringMolecular beam epitaxy
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Potentialités des lasers à fibre dans la génération de rayonnement cohérent UV

2006

Le premier laser a fibre dope aux ions de terres rares fonctionna au tout debut des annees 60. Il fournissait quelques milliwatts autour de 1 μm. Les decades suivantes virent tres peu d'ameliorations tant du cote des laboratoires que du point de vue industriel. La derniere decennie (1995/2005) vit se concretiser la seconde revolution des lasers a fibres. Deja kilowatt en continu, ils atteignent desormais les 10 13 watts/cm 2 avec des impulsions de la centaine de femtoseconde. Lors de cette presentation nous passerons en revue les potentialites des lasers a fibre. Nous decrirons les verrous technologiques qui ont ete leves ces dix dernieres annees pour les regimes CW mais aussi femtosecondes…

0103 physical sciencesGeneral Physics and Astronomy01 natural sciences010305 fluids & plasmasJournal de Physique IV (Proceedings)
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Vertical stacks of small InAs/GaAs self-assembled dots: resonant and non-resonant excitation

2003

4 páginas, 2 figuras.-- PACS: 78.67.Hc; 73.21.La; 78.55.Cr.-- Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002.

PhotoluminescenceMaterials sciencebusiness.industryQuantum dotsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsLine widthAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsSelf assembledBlueshiftCondensed Matter::Materials ScienceEmission bandQuantum dotOptoelectronicsVertical stacksbusinessLayer (electronics)PhotoluminescenceExcitation
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Carrier recombination in InAs/GaAs self-assembled quantum dots under resonant excitation conditions

2002

5 páginas, 4 figuras.-- PACS: 73.21.La;73.63.Kv;78.55.Cr;78.67.Hc;S7.12.-- Trabajo presentado en la 7th International Conference on Optics and Excitons in Confined Systems (OECS7).

PhotoluminescenceCondensed matter physicsPhononChemistryRelaxation (NMR)Electronic structureElectronCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsMolecular physicsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceQuantum dotCharge carrierWetting layer
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