Structural characterization of original 3D gallium structures grown by LP‐MOCVD

2004

This study is concerned with the growth and characterization of metallic gallium 3D structures, obtained with a single growth step, by the LP-MOCVD technique on various substrates. Commercial organo-metallic is used as gallium precursor and nitrogen as carrier gas. The growth temperature and the reactor pressure are ranking between 500 and 700 °C, and between 150 and 700 torr, respectively. Depending on the elaboration conditions, different 3D structures are obtained such as droplets, cauliflowers, aggregates or thin stems, with micrometer sizes. The morphology, substrate surface density and thermal stability are studied by optical and scanning electron microscopy. At last, X-ray microanaly…