0000000000505544
AUTHOR
Hideo Ohno
Influence of domain wall anisotropy on the current-induced hysteresis loop shift for quantification of the Dzyaloshinskii-Moriya interaction
Using several material systems with various magnitudes of the interfacial Dzyaloshinskii-Moriya interaction (DMI), we elucidate a critical influence of domain wall (DW) anisotropy on the current-induced hysteresis loop shift scheme widely employed to determine the magnitude of the Dzyaloshinskii-Moriya effective field (${H}_{\mathrm{DMI}}$). Taking into account the DW anisotropy in the analysis of the hysteresis loop shift, which has not been included in the original model [Phys. Rev. B 93, 144409 (2016)], we show that it provides quantitative agreement of ${H}_{\mathrm{DMI}}$ with that determined from an asymmetric bubble expansion technique for small DMI material systems. For large DMI sy…
A nondestructive analysis of the B diffusion in Ta–CoFeB–MgO–CoFeB–Ta magnetic tunnel junctions by hard x-ray photoemission
This work reports on hard x-ray photoelectron spectroscopy (HAXPES) of CoFeB based tunnel junctions. Aim is to explain the role of the boron diffusion for the observed improvement of the tunneling magnetoresistance ratio with increasing annealing temperature. The high bulk sensitivity of HAXPES was used as a nondestructive technique to analyze CoFeB–MgO–CoFeB magnetic tunnel junctions. The investigated samples were processed at different annealing temperatures from 523 to 923 K. Hard x-ray core level spectroscopy reveals an enforced diffusion of boron from the CoFeB into the adjacent Ta layer with increasing annealing temperature. The dependence of the tunneling magnetoresistance on the ann…