0000000000511253
AUTHOR
Vincenzo Guidi
showing 6 related works from this author
The experimental setup of the Interaction in Crystals for Emission of RADiation collaboration at Mainzer Mikrotron: Design, commissioning, and tests
2015
Silicon/germanium flat/bent crystals are thin devices able to efficiently deflect charged particle GeV-energy beams up to a few hundreds of μrad; moreover, high intensity photons can be efficiently produced in the so-called Multi-Volume Reflection (MVR) and Multiple Volume Reflections in One Crystal (MVROC) conditions. In the last years, the research interest in this field has moved to the dynamic studies of light negative leptons in the low energy range: the possibility to deflect negative particles and to produce high intensity γ sources via the coherent interactions with crystals in the sub-GeV energy range has been proved by the ICE-RAD (Interaction in Crystals for Emission of RADiation…
Enhancement of Bremsstrahlung Radiation Generated by Electron Beam Interaction in an Axially-Oriented Scintillator Crystal (Poster)
2019
Since their discovery, scintillator materials have played an important role in nuclear and particle physics, as well as in medical and industrial imaging. [...]
Steering of a Sub-GeV electron beam through planar channeling enhanced by rechanneling
2014
We report the observation of efficient steering of a 855 MeV electron beam at MAMI (MAinzer MIkrotron) facilities by means of planar channeling and volume reflection in a bent silicon crystal. A $30.5\text{ }\text{ }\ensuremath{\mu}\mathrm{m}$ thick plate of (211) oriented Si was bent to cause quasimosaic deformation of the (111) crystallographic planes, which were used for coherent interaction with the electron beam. The experimental results are analogous to those recorded some years ago at energy higher than 100 GeV, which is the only comparable study to date. Monte Carlo simulations demonstrated that rechanneling plays a considerable role in a particle's dynamics and hinders the spoiling…
Innovative remotely-controlled bending device for thin silicon and germanium crystals
2020
Steering of negatively charged particle beams below 1 GeV has demonstrated to be possible with thin bent silicon and germanium crystals. A newly designed mechanical holder was used for bending crystals, since it allows a remotely-controlled adjustment of crystal bending and compensation of unwanted torsion. Bent crystals were installed and tested at the MAMI Mainz MIcrotron to achieve steering of 0.855-GeV electrons at different bending radii. We report the description and characterization of the innovative bending device developed at INFN Laboratori Nazionali di Legnaro (LNL).
Progress towards the first measurement of charm baryon dipole moments
2021
Electromagnetic dipole moments of short-lived particles are sensitive to physics within and beyond the Standard Model of particle physics but have not been accessible experimentally to date. To perform such measurements it has been proposed to exploit the spin precession of channeled particles in bent crystals at the LHC. Progress that enables the first measurement of charm baryon dipole moments is reported. In particular, the design and characterization on beam of silicon and germanium bent crystal prototypes, the optimization of the experimental setup, and advanced analysis techniques are discussed. Sensitivity studies show that first measurements of $\Lambda_c^+$ and $\Xi_c^+$ baryon dip…
Investigation of the Electromagnetic Radiation Emitted by Sub-GeV Electrons in a Bent Crystal.
2015
The radiation emitted by 855 MeV electrons via planar channeling and volume reflection in a $30.5\text{\ensuremath{-}}\ensuremath{\mu}\mathrm{m}$-thick bent Si crystal has been investigated at the MAMI (Mainzer Mikrotron) accelerator. The spectral intensity was much more intense than for an equivalent amorphous material, and peaked in the MeV range in the case of channeling radiation. Differently from a straight crystal, also for an incidence angle larger than the Lindhard angle, the spectral intensity remains nearly as high as for channeling. This is due to volume reflection, for which the intensity remains high at a large incidence angle over the whole angular acceptance, which is equal t…