0000000000543922

AUTHOR

Salvatore D′arrigo

showing 1 related works from this author

Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

2021

High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. The neutron test campaigns on the SiC power MOSFETs (manufactered by ST) were conducted on the same wafer lot devices by STMicroelectronics and Airbus, with different neutron tester systems. HTGB and HTRB tests, which characterise gate-oxide integrity and junction robustness, show no difference between the non irradiated devices and those which survived to the neutron irradiation tests, with neutron fluence…

Materials scienceNuclear engineeringneutron beamTP1-1185power device reliabilityBiochemistrySettore FIS/03 - Fisica Della MateriaArticleAnalytical Chemistrychemistry.chemical_compoundReliability (semiconductor)silicon carbideNeutron fluxSilicon carbideNeutronPower semiconductor deviceIrradiationElectrical and Electronic EngineeringPower MOSFETInstrumentationsingle event burnoutChemical technologySettore FIS/01 - Fisica SperimentaleNeutron radiationSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Atomic and Molecular Physics and Opticschemistryfailure in timeSensors
researchProduct