Spectroscopy of an optical excited Ga doped SiO2 surface

Abstract We present the first spectroscopical analysis of the Ga/SiO2 surface interaction in hot environment. This interaction gives rise to inclusions of Ga atoms inside the silica matrix that produce structural changes and modify the SiO2 optical characteristics. This paper discusses both the time- and the frequency-resolved spectra of the fluorescence emission following UV pulsed laser excitation of the so “doped” silica in the range 15,000–28,000 cm−1. The investigation is completed by the electron paramagnetic resonance (EPR) spectra of two high-purity synthetic silica samples of commercial origin after thermal treatment in presence and in absence of a Ga atmosphere.