0000000000598213

AUTHOR

Uǧis Lācis

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Applicability of LES turbulence modeling for CZ silicon crystal growth systems with traveling magnetic field

2010

Abstract To examine the applicability of LES turbulence modeling for CZ silicon crystal growth systems with traveling magnetic fields, LES calculations with Smagorinsky–Lilly turbulence model and van Driest damping at the solid walls are carried out. The program package for the calculations was developed on the basis of the open-source code library OpenFOAM ® . A previously published laboratory model with low temperature melt InGaSn, a 20” crucible, and process parameters corresponding to industrial Czochralski silicon systems is considered. Flow regimes with two crystal and crucible rotation rates and with different strengths of the traveling magnetic field “down” are analyzed. The calcula…

SiliconTurbulenceChemistryTurbulence modelingCruciblechemistry.chemical_elementThermodynamicsCondensed Matter PhysicsComputational physicsMagnetic fieldInorganic ChemistryCrystalHeat transferMaterials ChemistryFluid dynamicsJournal of Crystal Growth
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