0000000000628629
AUTHOR
Laura Cristina Damonte
ZnO Nanoestructured Layers Processing with Morphology Control by Pulsed Electrodeposition
The fabrication of nanostructured ZnO thin films is a critic process for a lot of applications of this semiconductor material. The final properties of this film depend fundamentally of the morphology of the sintered layer. In this paper a process is presented for the fabrication of ZnO nanostructured layers with morphology control by pulsed electrodeposition over ITO. Process optimization is achieved by pulsed electrodeposition and results are assessed after a careful characterization of both morphology and electrical properties. SEM is used for nucleation analysis on pulsed deposited samples. Optical properties like transmission spectra and Indirect Optical Band Gap are used to evaluate th…
Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition
Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of them. Additionally, these primary oxide layers prevent direct hole combination when used in optoelectronic devices. Structural and optical characterizations were carried out by scanning electron microscopy, atomic for…
Positron lifetime measurements on neutron‐irradiated InP crystals
Neutron‐irradiated InP single crystals have been investigated by positron‐lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn‐transmuted atoms between 2×1015 and 2×1018 cm−3. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as‐grown and conventionally doped InP crystals. navarrof@evalvx.ific.uv.es ; Jose.Ferrero@uv.es